Recrystallization model of discrete amorphous regions in C₃H₅-molecular-ion-implanted silicon substrate surface analyzed by X-ray photoelectron spectroscopy

Abstract

We investigated the recrystallization of discrete amorphous regions formed in a C3H5-molecular-ion-implanted silicon (Si) substrate surface in the rapid thermal annealing (RTA). The change in the crystalline fraction of the C3H5-molecular-ion-implanted substrate surface after the RTA was obtained from the chemical shifts of Si 2p spectra by X-ray photoelectron spectroscopy. We found that the crystalline fraction increases depending on the RTA temperature after an incubation period. The transformation from the amorphous phase to the crystalline phase was analyzed on the basis of the Johnson–Mehl–Avrami–Kolmogorov theory. It was revealed that recrystallization of discrete amorphous regions proceeded three-dimensionally and activation energy was estimated to be 2.74 eV ± 0.39 eV, which is approximately equal to 2.70 for the solid phase epitaxy of the continuous amorphous layer in a Si crystal. Therefore, we believe that discrete amorphous regions are recrystallized via solid phase epitaxy laterally and vertically from the amorphous/crystal interface around them.

Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C3H5-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation

“…1. 13,26,27 When the percentage of neighboring amorphous defect particles is increased, the activation energy of SPEG is increased. Here, 1.72 eV in Fig.…”

“…26 2.74 eV is the activation energy when the amorphous/crystalline interface is approximately flat. 13 On the other hand, 3.30 eV indicates the activation energy when recrystallizing regions are surrounded by many amorphous regions and lacks regrowth crystalline template. 26 Moreover, 5 eV is the value required for the nucleation of crystal grains in the amorphous region.…”

“…The activation energy for SPEG depends on the percentage of neighboring amorphous defect particles. 13,26,27 If the percentage of neighboring amorphous defect particles is increased, the activation energy for SPEG is increased. The linear interpolation is applied to each value.…”

“…We have been developing a C 3 H 5 -molecular-ion-implanted epitaxial Si substrate as a gettering material for advanced CIS. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] The C 3 H 5 -molecular-ion-implanted epitaxial Si substrates are fabricated by the following procedure. C 3 H 5 molecular ions are generated from a hydrocarbon compound by the electron impact ionization method and implanted into a Czochralski (CZ)-grown Si substrate surface.…”

“…10,11 Moreover, before epitaxial Si layer growth, a subsequent recovery thermal annealing treatment is necessary to recrystallize the discrete amorphous regions in the high-dose C 3 H 5 -molecular-ion-implanted Si substrate surface. 12,13 However, in the high temperature and long thermal annealing treatment, hydrogen atoms trapped in the projection range diffused and passivation effect may be degraded. To optimize the subsequent thermal annealing conditions for achieve crystalline perfection in the Si substrate surface and prevent diffusion of the hydrogen atoms, understanding the recrystallization process of the discrete amorphous regions is a crucial technical issue.…”