Kinetic Monte Carlo Simulations for Recrystallization Process of Discrete Amorphous Regions in C<sub>3</sub> H<sub>5</sub>-Molecular-Ion-Implanted Silicon Substrate Surface

Kobayashi, Kōji; Okuyama, Ryosuke; Kadono, Takeshi; Onaka‐Masada, Ayumi; Hirose, Ryo; Suzuki, Akihiro; Koga, Yoshio; Kurita, Kazunari; Sueoka, Koji

doi:10.23919/iwjt59028.2023.10175183

2023 21st International Workshop on Junction Technology (IWJT) 2023

DOI: 10.23919/iwjt59028.2023.10175183

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Kinetic Monte Carlo Simulations for Recrystallization Process of Discrete Amorphous Regions in C₃ H₅-Molecular-Ion-Implanted Silicon Substrate Surface

Kōji Kobayashi

Ryosuke Okuyama

Takeshi Kadono

et al.

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2024

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Cited by 2 publications

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Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C₃H₅-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation

Kobayashi,

Okuyama,

Kadono

et al. 2024

ECS J. Solid State Sci. Technol.

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Technology computer-aided design (TCAD) kinetic Monte Carlo simulations revealed the unique recrystallization processes of discrete amorphous regions connected to a buried amorphous layer in a C3H5-molecular-ion-implanted silicon (Si) substrate. The faithful simulation models show that the discrete amorphous regions are first recrystallized two-dimensionally in the lateral direction from both sides and separated from the buried amorphous layer. Then, the separated discrete amorphous regions are recrystallized three-dimensionally in the lateral and vertical directions from both sides and the bottom. We found that the first two-dimensional recrystallization of discrete amorphous regions is caused by the retardation of solid-phase epitaxial growth at the Si substrate surface and near the buried amorphous layer. We also found that the large (small) discrete amorphous regions require a long (short) two-dimensional recrystallization before separating from the buried amorphous layer. The transition point in the recrystallization dimension can be determined from the lateral recrystallization length and the equivalent radius of discrete amorphous regions.

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Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C₃H₅-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation

Kobayashi,

Okuyama,

Kadono

et al. 2024

ECS J. Solid State Sci. Technol.

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TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface

Kobayashi,

Okuyama,

Kadono

et al. 2024

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In this study, we investigate the initial rapid recrystallization of a discretely amorphized C3H5-molecular-ion-implanted silicon (Si) substrate surface in the subsequent thermal annealing treatment through the analysis of plan-view transmission electron microscopy (TEM) images and technology computer-aided design (TCAD) process simulation. In the approach of the analysis of the plan-view TEM image of the Si substrate surface, we found that initial rapid recrystallization occurs in the intermediate regions between the residual crystalline and discrete amorphous regions formed in the C3H5-molecular-ion-implanted Si substrate surface. In addition, the TCAD process simulation results indicate that the intermediate regions correspond to the amorphous pockets formed around the discrete amorphous regions in the C3H5-molecular-ion-implanted Si substrate surface and are recrystallized preferentially during the short thermal annealing time. These plan-view TEM image analysis and TCAD process simulation results reveal a two-step recrystallization of the discretely amorphized C3H5-molecular-ion-implaned Si substrate surface. After the initial rapid recrystallization of amorphous pockets in the 1st step, the recrystallization of discrete amorphous regions starts in the 2nd step. The incubation period between the 1st and 2nd steps is the time required to recrystallize the amorphous pockets around the discrete amorphous regions completely and redefine the amorphous/crystalline interface.

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Kinetic Monte Carlo Simulations for Recrystallization Process of Discrete Amorphous Regions in C₃ H₅-Molecular-Ion-Implanted Silicon Substrate Surface

Cited by 2 publications

References 24 publications

Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C₃H₅-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation

Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C₃H₅-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation

TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface

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Kinetic Monte Carlo Simulations for Recrystallization Process of Discrete Amorphous Regions in C3 H5-Molecular-Ion-Implanted Silicon Substrate Surface

Cited by 2 publications

References 24 publications

Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C3H5-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation

Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C3H5-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation

TEM Image Analysis and Simulation Physics for Two-Step Recrystallization of Discretely Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate Surface

Contact Info

Product

Resources

About

Kinetic Monte Carlo Simulations for Recrystallization Process of Discrete Amorphous Regions in C₃ H₅-Molecular-Ion-Implanted Silicon Substrate Surface

Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C₃H₅-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation

Two- and Three-Dimensional Recrystallization of Discrete Amorphous in C₃H₅-Molecular-Ion-Implanted Silicon Surface Analyzed by TCAD Simulation