Implantation assisted copper diffusion: A different approach for the preparation of CuInS2∕In2S3 p-n junction

Abstract

Copper indium sulfide thin films were prepared using copper diffusion into argon ion implanted In2S3 thin films. A comparative study of copper diffusion in pristine and ion implanted In2S3 samples was also performed. It was found that copper indium sulfide formation was much better in argon implanted samples compared to that in unimplanted samples. Copper diffusion in implanted samples enabled us to prepare an In2S3∕CuInS2 solar cell. The fill factor of the cell prepared was 30.2% and the efficiency was 0.34%.

Growth and characterization of near-band-edge transitions in β-In2S3 single crystals

“…Diindium trisulfide b-In 2 S 3 , which replaces CdS to combine with ABX 2 (A¼ Cu, B ¼In, Ga, Al, and X ¼S, Se) family crystals is more environmental friendly and powerful for use in fabrication of solar-cell devices [1][2][3]. For the Cd-free solar cells (for green purpose), the use of b-In 2 S 3 buffer layer rendered the energy-conversion efficiency of thin-film solar cell to 12.9% [2,4].…”

High yield–low temperature growth of indium sulphide nanowires via chemical vapor deposition

“…Indium sulphide (In x S y ) is a III-VI semiconductor and may exist in the cubic a-In 2 S 3 , tetragonal bIn 2 S 3 trigonal g-In 2 S 3 or orthorhombic InS form [3]. Thin films (TFs) of In x S y have been grown so far by a variety of methods including metal-organic chemical vapor deposition (MOCVD) [1], spray [4][5][6], chemical bath [7,8], thermal evaporation [9][10][11] and spin coating [12] methods. Most of the In x S y TFs are actually polycrystalline and each has specific crystal, electrical and optical properties depending on the method of deposition used.…”