High yield–low temperature growth of indium sulphide nanowires via chemical vapor deposition

Enhanced growth and photoluminescence properties of SnxNy (x>y) nanowires grown by halide chemical vapor deposition

“…It must be emphasized that the reaction of Sn with NH 4 Cl occurred efficiently and all solid precursors including InCl 3 were totally transferred into the gas stream leading to uniform growth. It should also be noted that InCl 3 breaks down into InCl at elevated temperatures and was used recently for the growth of InS NWs via a reaction with H 2 S at temperatures as low as 250 1C [22]. The reaction of Sn with NH 4 Cl including InCl 3 lead to the growth of Sn x N y NWs similar to that shown in Fig.…”

Indium sulfide thin films as window layer in chemically deposited solar cells

“…Indium sulfide has been recognized as an alternative material due to their stability, transparency, photoconductive nature and because of the energy band gap that can be varied between 2 and 2.75 eV depending on its composition [1][2][3][4][5][6]. Several crystalline phases have been reported for the In 2 S 3 thin films (α, β and γ) and it has been found that the most stable phase at room temperature is the β-tetragonal [6].…”

“…Indium sulfide (In 2 S 3 ) thin films have been synthesized by chemical bath deposition technique onto glass substrates using In(NO 3 ) 3 as indium precursor and thioacetamide as sulfur source. X-ray diffraction studies have shown that the crystalline state of the as-prepared and the annealed films is β-In 2 S 3 .…”

Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires

“…Here, it should be noted that SnS 2 is an indirect band gap semiconductor but exhibits defect-related PL around 2.0-2.5 eV as we have shown recently by post growth processing of SnO 2 NWs under H 2 S [20]. In addition, note that InS has an indirect energy gap of 1.9 eV, β-In 2 S 3 is an n-type semiconductor with a direct band gap of 2.1 eV while it has been found that the optical band gap varies from 2.1 eV in pure β-In 2 S 3 to 2.9 eV in β-In 2 S 3-3x O 3x when it contains 8.5 at.% of oxygen [13]. Consequently the PL the Sn-doped In 2 O 3 NWs at ≈3.4 eV is related to the cubic bixbyite In 2 O 3 which is dominant after post growth processing under H 2 S between 300 to 400°C.…”

“…It has been shown that bulk β-In 2 S 3-3x O 3x has an optical band gap that varies from 2.1 eV in pure β-In 2 S 3 to 2.9 eV when it contains 8.5 at.% of oxygen and has been proposed as an alternative to CdS buffer layers in CuIn x Ga 1-x Se 2 solar cells [12,13]. In addition, the post growth processing of Sn-doped In 2 O 3 NWs under H 2 S at different temperatures is important in understanding their properties and limitations as gas sensors which so far has been considered only up to 250°C [14][15][16].…”