Implementation of a phase shift full-bridge converter for LDC using GaN HEMT

Yoo, Jae-Gon; Joo, Dong-Myoung; Kim, Hyunbin; Kim, Jong-Soo

doi:10.1109/icems.2017.8056323

Cited by 4 publications

(5 citation statements)

References 3 publications

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“…In [41] the efficiency of 2 kW PSFB designs based on Si and SiC MOSFETs is measured and compared. In [21] the efficiency improvement in a 500 W PSFB converter with GaN HEMT SRs is verified experimentally.…”

Section: Secondary Side Srs LV Mosfetsmentioning

confidence: 86%

“…However, the forward voltage drop of diodes cause relatively high conduction losses. By replacing the diode with an active switching element, the so called synchronous rectifier (SR), the losses can be notably reduced [21].…”

Section: Secondary Side Rectifier LV Mosfetsmentioning

confidence: 99%

“…The current of the SRs (Q 5 , Q 6 in Figure 1) is plotted in Figure 4 and can be calculated with Equations (18)- (21): losses. By replacing the diode with an active switching element, the so called synchronous rectifier (SR), the losses can be notably reduced [21]. The rectification stage may have different configurations: center tapped, current doubler or full bridge [17].…”

Section: Secondary Side Rectifier LV Mosfetsmentioning

confidence: 99%

“…The current of the SRs (Q5, Q6 in Figure 1) is plotted in Figure 4 and can be calculated with Equations (18)- (21): The rms currents of both legs are equal in this ideal case and can be calculated from the previous formulas as expressed by Equation 22: The rms currents of both legs are equal in this ideal case and can be calculated from the previous formulas as expressed by Equation 22 Out of the rms currents the conduction losses of the secondary side rectifiers can be estimated with Equation 23where R DS(on),SR stands for the equivalent resistance of the secondary side switches:…”

Section: Secondary Side Rectifier LV Mosfetsmentioning

confidence: 99%

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A Practical Approach to the Design of a Highly Efficient PSFB DC-DC Converter for Server Applications

et al. 2019

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The phase shift full bridge (PSFB) is a widely known isolated DC-DC converter topology commonly used in medium to high power applications, and one of the best candidates for the front-end DC-DC converter in server power supplies. Since the server power supplies consume an enormous amount of power, the most critical issue is to achieve high efficiency. Several organizations promoting electrical energy efficiency, like the 80 PLUS, keep introducing higher efficiency certifications with growing requirements extending also to light loads. The design of a high efficiency PSFB converter is a complex problem with many degrees of freedom which requires of a sufficiently accurate modeling of the losses and of efficient design criteria. In this work a losses model of the converter is proposed as well as design guidelines for the efficiency optimization of PSFB converter. The model and the criteria are tested with the redesign of an existing reference PSFB converter of 1400 W for server applications, with wide input voltage range, nominal 400 V input and 12 V output; achieving 95.85% of efficiency at 50% of the load. A new optimized prototype of PSFB was built with the same specifications, achieving a peak efficiency of 96.68% at 50% of the load.

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Section: Secondary Side Srs LV Mosfetsmentioning

confidence: 86%

Section: Secondary Side Rectifier LV Mosfetsmentioning

confidence: 99%

Section: Secondary Side Rectifier LV Mosfetsmentioning

confidence: 99%

Section: Secondary Side Rectifier LV Mosfetsmentioning

confidence: 99%

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A Practical Approach to the Design of a Highly Efficient PSFB DC-DC Converter for Server Applications

et al. 2019

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“…For other industrial applications, Yoo et al [49] demonstrated a 300/14-V, 500-W, 100-kHz, >93% efficiency PSFB converter with a secondary synchronous rectifier. Issues regarding PCB layout and optimal dead time were discussed.…”

Section: Isolated Dc-dc Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

104

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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