Implementation of contact hole patterning performance with KrF resist flow process for 60nm node DRAM application

Kim, Hyoung-Ryeun; Ahn, Yeong-Bae; Kim, JongKuk; Kim, SeokKyun; Park, DongHeok; Kim, Young‐Sik

doi:10.1117/12.659398

Search citation statements

Order By: Relevance

Paper Sections

Select...

Comparison To Experiments Results2

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2007

2010

Publication Types

Select...

Book1

Article1

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(2 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figures 16 and 17 show experimental results of Hynix Semiconductor Inc. due to various temperature and duty ratios for KrF 248 nm [9] and ArF 193 nm illumination [10,11]. The contact holes become smaller as the duty ratio becomes larger and as the temperature becomes larger.…”

Section: Comparison To Experiments Resultsmentioning

confidence: 99%

See 1 more Smart Citation

A Method for Optical Proximity Correction of Thermal Processes: Orthogonal Functional Method

Kim¹

2010

Lithography

View full text Add to dashboard Cite

Section: Comparison To Experiments Resultsmentioning

confidence: 99%

“…By matching with experiment results [9], simulation conditions are optimized. For thermal reflow, an antireflective layer of 80-nm-thick resist is coated over the silicon wafer prior to the resist process.…”

Section: Comparison To Experiments Resultsmentioning

confidence: 99%

A Method for Optical Proximity Correction of Thermal Processes: Orthogonal Functional Method

Kim¹

2010

Lithography

View full text Add to dashboard Cite

Orthogonal Functional Method for Optical Proximity Correction of Thermal Processes in Optical Lithography

Kim¹

2007

jjap

View full text Add to dashboard Cite

The patterning of very small features is a difficult challenge for current lithography technology. The thermal process is an easy and simple solution involving no any additional processes. This process is one of extension techniques for 248 nm KrF and 193 nm ArF lithography equipment and chemically amplified resists (CARs). However, thermal effects are severe, thus, more critical approaches are needed for small pattern formation. In this paper, thermal processes are described and modelled for evaluating property changes in 248 and 193 nm CARs. The simulated results agree well with experimental results. Those processes can be used to shrink not only contact hole patterns but also space patterns. For the optical proximity correction (OPC) of thermal effects, an orthogonal functional method is introduced. These orthogonal functions depend on pattern types such as contact holes and spaces. By using this method, underbaked postexposure bake and thermal reflow are performed for the below-45-nm contact hole pattern for a 248 nm KrF CAR and the 32 nm contact hole pattern for a 193 nm ArF CAR. Thus, an orthogonal functional method is useful for carrying out the OPC for thermal effects.

show abstract

Implementation of contact hole patterning performance with KrF resist flow process for 60nm node DRAM application

Cited by 2 publications

References 0 publications

A Method for Optical Proximity Correction of Thermal Processes: Orthogonal Functional Method

A Method for Optical Proximity Correction of Thermal Processes: Orthogonal Functional Method

Orthogonal Functional Method for Optical Proximity Correction of Thermal Processes in Optical Lithography

Contact Info

Product

Resources

About