Importance of Many-Body Effects in the Clustering of Charged Zn Dopant Atoms in GaAs

Ebert, Ph.; Zhang, Tianjiao; Kluge, F.; Simon, Matthias; Zhang, Zhenyu; Urban, K.

doi:10.1103/physrevlett.83.757

Cited by 44 publications

(12 citation statements)

References 17 publications

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“…Recently, such clusters of zinc dopants were verified by atomically-resolved analysis in GaAs [13]. The carrier mobility in highly-doped semiconductors is best investigated for p-and n-type silicon.…”

Section: Ionized Impurity Scatteringmentioning

confidence: 97%

“…Only at low and high carrier concentrations the film mobilities fit to the semiempirical mobility fitting curve for ZnO (Fig.1, 2). However, the dramatic decrease of µ around a carrier concentration of N≈2 be explained by taking into account the effect of impurity clustering (see [11][12][13]) and nonparabolicity of the conduction band of ZnO which was shown already recently [3].…”

Section: Amentioning

confidence: 99%

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Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

Ellmer

Mientus²

2008

Thin Solid Films

336

191

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Highly-doped indium-tin oxide films exhibit resistivities ρ as low as 1. . Thus the grain barrier trap densities of ZnO and ITO are significantly different, which seems to be connected with the defect chemistry of the two oxides and especially with the piezoelectricity of zinc oxide.Keywords Transparent conductive oxides, carrier transport, degenerate semiconductors, grain barriers, electron mobility 2 Therefore, in the present study the carrier transport processes in ITO and ZnO are compared in order to get a deeper understanding of the differences between these TCO materials. For this purpose conductivity and Hall mobility measurements on ZnO:Al and ITO films were undertaken for films deposited on amorphous as well as single crystalline substrates (sapphire) in order to determine the dominant scattering processes (ionized impurities, grain barriers, crystallographic defects). Our own data are compared with literature data reported for ZnO and ITO to show the general trends. Theoretical and semiempirical models are used to fit the experimental data and to derive characteristic material parameters for these three oxides. Introduction Theoretical modelsThe theoretical models on ionized impurity scattering were already reviewed in 2001 by one of the authors when estimating the mobility limit of highly-doped zinc oxide [3]. In the following a short summary is given to lay the basis for the further discussion.Ionized impurity scattering. This scattering process is caused by ionized dopant atoms and dominates for carrier concentrations above about 10 19 cm -3. An analytical expression for the mobility µ ii of degenerately doped semiconductors, taking into account the non-parabolicity of the conduction band, was given by Zawadzki [7] and refined by Pisarkiewicz et al. [6]:where the screening functionwith the parameter ξ np =1-m 0 */m*, which describes the non-parabolicity of the conduction band (m*, m 0 * -effective masses in the conduction band and at the conduction band edge, 4 respectively). The prefactor in equ. (1) The fit parameters µ max , µ min and µ min -µ 1 describe the lattice mobility at low carrier concentrations, the mobility limited by ionized impurity scattering and the clustering mobility, discussed above (see Table 2). . The ZnO mobility values were fitted using the empirical formula (3) and the fit parameters are summarized in Table 2 together with the corresponding values for silicon. In the transition region from lattice to ionized scattering for 5 . 10 16 < N < 5 . 10 18 cm -3 a large scattering of the experimental ZnO data can be observed. Therefore, the data have been fitted in analogy to the silicon data, which exhibit a much higher accuracy [14].However, the exact transition does not influence the conclusions much since we are interested predominantly in ionized impurity scattering in the region N > 10 19 cm -3 .5 Neutral impurity scattering. Neutral shallow-impurity scattering is often discussed in papers about transport in TCO films at room temperature [17,18]. The mobility due to ...

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Section: Ionized Impurity Scatteringmentioning

confidence: 97%

Section: Amentioning

confidence: 99%

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

Ellmer

Mientus²

2008

Thin Solid Films

336

191

View full text Add to dashboard Cite

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“…To provide sufficiently low resistivity (<10 −4 Ωcm), the carrier concentration should be at least on the order of 10 20 cm −3 , limiting the mobility at ∼80 cm 2 /Vs by ionized impurity scattering . Too high doping level could lead to the onset of free carrier absorption within the visible spectral range and to clustering of the dopant ions, which significantly increases the scattering rate .…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxy of Ga_2(1‑x)In_2xO₃ layers by MOVPE with two different oxygen sources

Baldini

Gogova

Irmscher

et al. 2014

Crystal Research and Technology

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Ga 2(1-x) In 2x O 3 epitaxial layers have been grown on (0001) Al 2 O 3 substrates by metal organic vapour phase epitaxy (MOVPE). The process parameters were optimized and the effects related to the use of two alternative oxygenation sources like O 2 and H 2 O were studied. Different In content x [x = In/(In + Ga)] were investigated in order to determine the In solubility limit in β-Ga 2 O 3 . By using pure O 2 during the growth, the In amount detected in the layers increased linearly with the flux of In precursor injected into the reactor, but the X-ray diffraction patterns showed the presence of In 2 O 3 , in addition to β-Ga 2 O 3 , for every In content. The second phase formation was confirmed by a double step feature placed at the absorption edge in optical transmission spectra, compatible with the presence of the two materials. With H 2 O as an oxygenation source, no In 2 O 3 phase was observed up to xß0.25. The growth of the mixed Ga 2(1-x) In 2x O 3 phase was confirmed by XRD spectra, wherein the β-Ga 2 O 3 -related peaks shifted at lower 2θ angles as expected from the substitution of Ga 3+ ions with bigger In 3+ ones. The variation of bandgap was confirmed by optical transmittance measurements, which showed a red shift of the absorption edge corresponding to In incorporation.

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“…This limitation is a universal property of semiconductors. Recently, Ebert et al [37] were visualised the impurity clusters in Zn doped GaAs by cross-sectional tunnelling microscopy.…”

Section: Optical Studiesmentioning

confidence: 99%

Investigation of p-type SnO2:Zn films deposited using a simplified spray pyrolysis technique

Ravichandran¹,

Thirumurugan²,

Begum³

et al. 2013

Superlattices and Microstructures

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Importance of Many-Body Effects in the Clustering of Charged Zn Dopant Atoms in GaAs

Cited by 44 publications

References 17 publications

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

Heteroepitaxy of Ga_2(1‑x)In_2xO₃ layers by MOVPE with two different oxygen sources

Investigation of p-type SnO2:Zn films deposited using a simplified spray pyrolysis technique

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Importance of Many-Body Effects in the Clustering of Charged Zn Dopant Atoms in GaAs

Cited by 44 publications

References 17 publications

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide

Heteroepitaxy of Ga2(1‑x)In2xO3 layers by MOVPE with two different oxygen sources

Investigation of p-type SnO2:Zn films deposited using a simplified spray pyrolysis technique

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Heteroepitaxy of Ga_2(1‑x)In_2xO₃ layers by MOVPE with two different oxygen sources