Investigation of p-type SnO2:Zn films deposited using a simplified spray pyrolysis technique

Properties of fluorine-doped SnO2 thin films by a green sol–gel method

“…However, its electrical resistivity is still quite high because of their intrinsically low carrier density and mobility. One way to reduce electrical resistivity of SnO 2 films is to control the concentration of oxygen vacancy by doping an extrinsic dopant such as the elements in groups IIB, IIIB, VB, and VIIB of the Periodic Table. These elements can be, but not limited to, zinc [4,5], indium [6][7][8][9], gallium [10,11], aluminum [12][13][14][15], antimony [16][17][18], and fluorine [19][20][21][22]. Among them, fluorine-doped tin oxide (FTO) films show rather low resistivity (in the order of 10 À 4 Ω cm) and highly chemical-and thermal-stable [23].…”

Study of p-type AlN-doped SnO2 thin films and its transparent devices

“…[13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] These studies have revealed that the cation doping level required to convert the n-type SnO 2 phase to p-type conduction is high. The typical doping concentration of cation dopants is between 10 21 and 10 23 cm -3 ; however, the achieved hole concentration is between only 10 15 and 10 19 .…”

“…The hole mobility of reported cation-doped p-type SnO 2 -based thin films has ranged between 10 -3 and 10 1 cm 2 /V-s, which is low. [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Compared with other traditional metallic dopants, N is nontoxic and environmentally friendly; thus, N is an ideal substitute anion dopant for preparing p-type SnO 2 thin films. In this study, Al and N were applied in co-doping an SnO 2…”

Effect of fluorine (an anionic dopant) on transparent conducting properties of Sb (a cationic) doped ZnO thin films deposited using a simplified spray technique

“…The high optical transmission of the films is generally due to the following factors [33,34,35]. The band gap decrease at the highest F doping level (15 at.…”