Importance of the Plasmon Damping for the Dynamical Image Forces

Gabovich, A. M.; Розенбаум, В. М.; Войтенко, А. И.

doi:10.1002/(sici)1521-3951(199907)214:1<29::aid-pssb29>3.0.co;2-g

Cited by 3 publications

(3 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the latter results have been obtained neglecting the finiteness of the plasmon lifetime. The present authors showed [64] that even a small plasmon damping effectively smoothes out the oscillations of the dynamic origin, restoring for large distances the classical image force energy spatial dependence (related implicit results can be found in Ref. [45]).…”

Section: Introductionsupporting

confidence: 69%

See 1 more Smart Citation

Dynamical Image Forces near Semiconductor-Vacuum Interfaces and in Vacuum Interlayers between Semiconductors

Gabovich

Розенбаум

Войтенко

2001

phys. stat. sol. (b)

Self Cite

View full text Add to dashboard Cite

Dynamical image force (polarization) energies WðzÞ induced by charged particles moving perpendicular to the vacuum-semiconductor interface or in the vacuum slab between semiconductors have been calculated on the basis of the perturbation theory developed by the authors earlier. The cases of the uniform and uniformly accelerated motions are treated as an example. The adopted dielectric approach takes into account both spatial and temporal dispersions of the electrode dielectric functions eðk; wÞ. It is shown that the quantum-mechanical character of the k-dependence of eðk; wÞ leads to a smoother WðzÞ dependence than in the semiclassical case. It is also demonstrated that the proper account of the quantum-mechanical screening behavior leads to a drastic reduction of the dynamical corrections to the static image forces. For reasonable values of the relevant parameters of the problem it is sufficient to retain only the first dynamical term of the perturbation series. Thus, the use of the expansion method is justified for multilayer semiconductor structures.

show abstract

Section: Introductionsupporting

confidence: 69%

“…Those oscillations result from the creation of real surface plasmons [8]. However, it turns out that the existing plasmon damping reduces the oscillation amplitudes substantially [64]. Thus, the scope of the adopted perturbation approach is considerably extended.…”

Section: Polarization Energy In a Sandwichmentioning

confidence: 99%

Dynamical Image Forces near Semiconductor-Vacuum Interfaces and in Vacuum Interlayers between Semiconductors

Gabovich

Розенбаум

Войтенко

2001

phys. stat. sol. (b)

Self Cite

View full text Add to dashboard Cite

show abstract

“…As a consequence, the velocity of ions and ions clusters is significantly lower as compared to the static case. Namely, the non-relativistic (because the particles involved, unlike electrons, are heavy and their energies are usually low enough) dynamic corrections to the static image force attraction, caused by the response retardation of the surface plasmon reaction [42,46,[49][50][51], conspicuously attenuate the textbook electrostatic interface polarization [41,52].…”

Section: Introductionmentioning

confidence: 99%

New collective trampoline mechanism of accelerated ion-plasma sputtering

Gabovich

Semeniuk²,

Semeniuk³

2019

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Results of the newly found anomalous accelerated plasma ion sputtering of solid-state targets are presented. The rate of sputtered particles comprises from one to several tens of atoms per one impinging ion, ion energies being in the range of tens to five hundreds electron volts. The anomalous sputtering is realized for ion current density in the plasma flow being not less than 10 mA cm −2 and threshold specific power of the ion flow from 0.7 to 2 W cm −2 depending on the target material. The qualitative explanation proposed dubbed 'collective trampoline accelerated sputtering'. The collective nature of this sputtering regime differs from the conventional pair collision cascade one. The trampoline sputtering leads to the intense texturing of the materials with submicron characteristic structure sizes. The new sputtering method could be applied (i) in the technology of plasma ion deposition of the functional coatings to replace the widespread magnetron sputtering sources of lower productivity; (ii) in the photovoltaics to solve the problem of the so-called 'black' multi-crystalline silicon in order to reduce the light reflectance coefficient; (iii) in the production of silicon composite anodes for lithium ion batteries to enhance their lifetimes regarding charge/discharge cycles, for which the final positive result is largely determined by the surface structure of the silicon wafer for photovoltaics and the surface structure of the anode current collector for lithium-ion batteries.

show abstract

Dynamic image forces near a semiconductor-vacuum interface: The role of quantum-mechanical corrections

Войтенко

Gabovich

2001

Phys. Solid State

View full text Add to dashboard Cite

Importance of the Plasmon Damping for the Dynamical Image Forces

Cited by 3 publications

References 17 publications

Dynamical Image Forces near Semiconductor-Vacuum Interfaces and in Vacuum Interlayers between Semiconductors

Dynamical Image Forces near Semiconductor-Vacuum Interfaces and in Vacuum Interlayers between Semiconductors

New collective trampoline mechanism of accelerated ion-plasma sputtering

Dynamic image forces near a semiconductor-vacuum interface: The role of quantum-mechanical corrections

Contact Info

Product

Resources

About