2003
DOI: 10.1143/jjap.42.l895
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Improved Annealing Process for Electroless Pd Plating Induced Crystallization of Amorphous Silicon

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“…Metal-induced crystallization (MIC) of amorphous silicon is well studied in the literature. The addition of small amounts of metals has been shown to significantly reduce the solid-phase crystallization temperature (to 500 °C). This process is very significant in electronics because the formation of thin films of transistors leads to excellent electrochemical properties .…”
Section: Introductionmentioning
confidence: 99%
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“…Metal-induced crystallization (MIC) of amorphous silicon is well studied in the literature. The addition of small amounts of metals has been shown to significantly reduce the solid-phase crystallization temperature (to 500 °C). This process is very significant in electronics because the formation of thin films of transistors leads to excellent electrochemical properties .…”
Section: Introductionmentioning
confidence: 99%
“…This process is very significant in electronics because the formation of thin films of transistors leads to excellent electrochemical properties. 6 Metals, such as Ni [2][3][4] and Au, 7,8 have been applied for the induced crystallization (IC) and have been found to be the most effective and well developed. The gold IC of amorphous silicon 8 takes place by the interaction of free electrons of Au atoms that rearrange the silicon-silicon bonding, turning it into a crystalline structure.…”
Section: Introductionmentioning
confidence: 99%