Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Nakada, Naoyuki; Nakaji, M.; Ishikawa, Hiroyasu; Egawa, Takashi; Umeno, Masayoshi; Jimbo, Takashi

doi:10.1063/1.126171

Cited by 105 publications

(64 citation statements)

References 9 publications

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“…When AlGaN aluminium content is in the range [40%…60%] [32][33][34][35], the reflectivities are comparable with those of LM AlInN/GaN DBRs (so are the refractive index contrasts) as far as the number of pairs does not exceed 20 to 30, i.e. for moderate reflectivity DBRs.…”

Section: Feature Articlementioning

confidence: 60%

Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Carlin

Zellweger

Dorsaz

et al. 2005

Physica Status Solidi (b)

150

113

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We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for successful fabrication of a microcavity light emitting diode, a distributed Bragg reflector with 99.4% reflectivity and microcavities with a quality factor over 800. These results establish state-of-the-art values for III-nitrides, and announce the future importance of AlInN in GaN-based optoelectronics.

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Section: Feature Articlementioning

confidence: 60%

Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Carlin

Zellweger

Dorsaz

et al. 2005

Physica Status Solidi (b)

150

113

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“…The insertion of a distributed Bragg reflector (DBR) between the active layer and the substrate contributes to the enhancement of the optical output power of a LED. Nakada et al reported that considerably higher output power was obtained from a GaInN LED after inserting a DBR between the LED structure and sapphire substrate [1]. Since thin-film laser lift-off (LLO) techniques have recently been developed [2][3][4], GaN-based LEDs fabricated on reflective-metal-mirrorcoated Si substrates by transferring the LED structures from sapphire substrates have been demonstrated [5].…”

Section: Introductionmentioning

confidence: 98%

GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

Ishikawa

Jimbo

Egawa

2008

Phys. Status Solidi (c)

Self Cite

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We report the effect of inserting a lattice‐matched AlInN/GaN distributed Bragg reflector (DBR) on the performance of GaInN light emitting diodes (LEDs) on Si substrates. The lattice‐matched AlInN/GaN DBR is superior to the previously used AlGaN/AlN DBR with respect to the suppression of cracking and the interface smooth ness. The light output power (PEL) of the LED increases with increasing number of pairs in the DBR and agrees well with the calculated one. The PEL of the 14.5‐pair AlInN/GaN DBR LED is about 3.6‐fold higher than that of the non‐DBR LED. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…While AlN/GaN DBRs have been reported 14 , epitaxial growth considerations usually limit the Al fraction to between 0.25 and 0.4 15,16 . In the light of this limitation the performance of a RCLED structure incorporating a 9 period Al 0.3 Ga 0.7 N/GaN DBR and a single QW active region was further investigated.…”

Section: Critical Design Parametersmentioning

confidence: 99%

Optical design of GaN resonant cavity LEDs emitting at 510nm for use in plastic optical fiber applications

et al. 2003

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The optimized optical design of GaN resonant cavity light emitting didoes (RCLEDs) emitting at 510nm for maximum extraction efficiency into numerical apertures (NAs) of 1.0 (total emission) and 0.5 (typical plastic optical fiber NA) are determined using a modeling tool based on the simulation of dipole emission in a multilayer structure. The optimization is performed for a metal-AlGaN/GaN DBR cavity structure as functions of the aluminum fraction in the DBR and the internal quantum well (QW) emission linewidth. The optimum number of DBR pairs is shown to depend on both these parameters together and the emission NA, and varies between 3 and 14. The maximum calculated extraction efficiency for a metal-AlN/GaN cavity structure, assuming a QW emission linewidth of 30nm, is 0.18 (0.055) into an emission NA of 1.0 (0.5). The position of the QW relative to the metal mirror is shown to be the crucial device parameter in determining the extraction efficiency of the RCLED. Simulations show farfield measurements should provide information on the position of the QWs in the cavity. The reduction in the spectral emission linewidth of the RCLED due to the cavity is also modeled.

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Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Cited by 105 publications

References 9 publications

Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

GaInN light emitting diodes with AlInN/GaN distributed Bragg reflector on Si

Optical design of GaN resonant cavity LEDs emitting at 510nm for use in plastic optical fiber applications

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