Improved conductivity of aluminum-doped ZnO: The effect of hydrogen diffusion from a hydrogenated amorphous silicon capping layer

Abstract

Improved conductivity of aluminum-doped Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Related ArticlesHigh Si and Ge n-type doping of GaN doping -Limits and impact on stress Appl. Phys. Lett. 100, 122104 (2012) Generalized conductivity model for polar semiconductors at terahertz frequencies Appl. Phys. Lett. 100, 122103 (2012) Numerical analysis of formation properties of a high-field dipole domain for submicron GaAs field-effect transistor devices J. Appl. Phys. 111, 054513 (2012) Thermoelectric properties of Zn-doped GaSb J. Appl. Phys. 111, 043704 (2012) Efficient room-temperature spin detector based on GaNAs

On the effect of the underlying ZnO:Al layer on the crystallization kinetics of hydrogenated amorphous silicon

“…Furthermore, to investigate the influence of the underlying ZnO:Al film on the crystallization kinetics of a-Si:H, annealing was performed at 600 C for 10 h. A resistivity improvement in the underlying ZnO:Al films was observed after SPC, as reported in a previous work from our group, by Ponomarev et al 32 This is in agreement with the experimental observation from Lee et al 33 and Ruske et al 34 Figure 3 shows the crystallization kinetics results, where the crystallization content (X c ) 35 was plotted as a function of the annealing time. The nucleation took place earlier in glass/ZnO:Al (130 nm and 800 nm)/a-Si:H than in glass/SiN x /a-Si:H in agreement with the results earlier reported.…”

Electron mobility enhancement in ZnO thin films via surface modification by carboxylic acids

“…4 As a result, the properties of these layers are often subsequently enhanced via high-temperature processing steps. Common strategies include annealing in either hydrogen gas environments 5,6 or in the presence of a hydrogen-rich capping layer, 7 which increases the carrier concentration by introducing hydrogen into the ZnO and creates shallow donor states. 8 Removing oxygen-vacancy donor states by annealing in an oxygen-rich environment has the opposite effect, reducing the carrier concentration.…”

DC‐sputtered ZnO:Al as transparent conductive oxide for silicon heterojunction solar cells with µc‐Si:H emitter

“…Figure (c) demonstrates the Hall measurement results, performed on the single ZnO:Al layer on glass. As Figure (c) suggests, the improved mobility (red triangles) is the main reason for the resistivity reduction, because of the formation of larger ZnO:Al grains . Overall, the carrier density (blue triangles) seems almost constant for all the thicknesses.…”

“…The ZnO:Al film has a polycrystalline structure . Consequently, its resistivity strongly depends on the deposited thickness because the formation of larger grains in a thicker film drastically decreases the resistivity . Hence, the thickness is one of the important parameters that should be considered to satisfy the sheet resistance criteria.…”