Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer

Sheu, Jinn-Kong; Huang, Fenglan; Lee, Chia Hui; Lee, Ming Lun; Yeh, Yu Min; Chen, Po Cheng; Lai, Wei–Chi

doi:10.1063/1.4818340

Cited by 20 publications

(4 citation statements)

References 26 publications

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“…However, GaN with higher Fe concentrations exhibits room temperature ferromagnetic [4,5] and antiferromagnetic [5] features associated with the aggregation of Fe cations, leading to the formation of various magnetically robust Fe x N nanocrystals. Furthermore, light absorption associated with the Mn mid-gap band in GaN improves the efficiency of GaN-based solar cells [6]. At the same time, the formation of Mn-Mg k impurity complexes activates room temperature infrared luminescence [7], suggesting that the optoelectronic capabilities of nitrides can be extended towards the communication windows.…”

Section: Introductionmentioning

confidence: 99%

Experimental determination of Rashba spin-orbit coupling in wurtziten-GaN:Si

et al. 2014

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Millikelvin magnetotransport studies are carried out on heavily n-doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy. The dependence of the conductivity on magnetic field and temperature is interpreted in terms of theories that take into account disorder-induced quantum interference of one-electron and many-electron self-crossing trajectories. The Rashba parameter α R = (4.5 ± 1) meVÅ is determined, and it is shown that in the previous studies of electrons adjacent to GaN/(Al,Ga)N interfaces, bulk inversion asymmetry was dominant over structural inversion asymmetry. The comparison of experimental and theoretical values of α R across a series of wurtzite semiconductors is presented as a test of current relativistic ab initio computation schemes. Low-temperature decoherence is discussed in terms of disorder-modified electron-electron scattering.

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Section: Introductionmentioning

confidence: 99%

Experimental determination of Rashba spin-orbit coupling in wurtziten-GaN:Si

et al. 2014

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“…Simulation is a good method to study defects in semiconductor materials except experiment. There is a lot of research on GaN used experiment or theoretical calculation [2][3][4]. Neugebauer and Van De Walle calculated the electronic structure and atomic structure of the intrinsic defects of GaN by first principles [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN

Cai

Feng

2017

Journal of Nanotechnology

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The effect of gallium vacancy (VGa) and nitrogen vacancy (VN) defects on the electronic structure and optical properties of GaN using the generalized gradient approximation method within the density functional theory were investigated. The results show that the band gap increases in GaN with vacancy defects. Crystal parameters decrease in GaN with nitrogen vacancy (GaN:VN) and increase in GaN with gallium vacancy (GaN:VGa). The Ga vacancy introduces defect levels at the top of the valence band, and the defect levels are contributed by N2p electron states. In addition, the energy band shifts to lower energy in GaN:VNand moves to higher energy in GaN:VGa. The level splitting is observed in the N2p states of GaN:VNand Ga3d states of GaN:VGa. New peaks appear in lower energy region of imaginary dielectric function in GaN:VNand GaN:VGa. The main peak moves to higher energy slightly and the intensity decreases.

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“…This gives rise to the importance of investigating surface states, the formation of interfaces, and zone bending. This is due to the fact that such properties play a key role in nanostructures, nanoheterostructures and in the development of optoelectronic devices [1,2].…”

Section: Introductionmentioning

confidence: 99%

Synchrotron radiation photoemission study of the electronic structure of the ultrathin K/AlN interface

Benemanskaya

Timoshnev²,

Iluridze

et al. 2022

Semiconductors

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The electronic structure of the clean AlN surface and the ultrathin K/AlN interface has been studied in situ by synchrotron-based photoelectron spectroscopy using the photon energies in the range of 100-650 eV. The effect of K adsorption was studied. Changes in the valence band and in the Al 2p, N 1s, and K 3p core levels spectra have been investigated using K submonolayer deposition. Modification of the surface electronic structure of the AlN caused by K adsorption is found to originate from the local interaction of N surface atoms and K adatoms. As a results the suppression of intrinsic surface state and appearance of a new induced state are observed. It was found the K-induced electron redistribution effect that causes the positive energy shift of N 1s surface peak and increasing N-ionicity. Keywords: III-nitrides, electronic structure, surface states, metal-III-nitride interfaces, photoelectron spectroscopy.

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Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer

Cited by 20 publications

References 26 publications

Experimental determination of Rashba spin-orbit coupling in wurtziten-GaN:Si

Experimental determination of Rashba spin-orbit coupling in wurtziten-GaN:Si

Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN

Synchrotron radiation photoemission study of the electronic structure of the ultrathin K/AlN interface

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