2016
DOI: 10.1016/j.tsf.2016.02.003
|View full text |Cite
|
Sign up to set email alerts
|

Improved designs of Si-based quantum wells and Schottky diodes for IR detection

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 9 publications
(3 citation statements)
references
References 24 publications
0
3
0
Order By: Relevance
“…Designing a detector with good performance requires its active material to have high epitaxial quality, low contact resistance, and good passivation. Devices with good IR response also require high Ge content and SiGe layers that are intrinsic or lowly doped. The problem with these strained layers is that the increasing Ge content limits the layer thickness due to the critical thickness in the metastable region.…”
Section: Resultsmentioning
confidence: 99%
“…Designing a detector with good performance requires its active material to have high epitaxial quality, low contact resistance, and good passivation. Devices with good IR response also require high Ge content and SiGe layers that are intrinsic or lowly doped. The problem with these strained layers is that the increasing Ge content limits the layer thickness due to the critical thickness in the metastable region.…”
Section: Resultsmentioning
confidence: 99%
“…Commonly used SWIR optoelectronic materials including InGaAs, HgCdTe, PbS, and mainstream InGaAs SWIR imaging chips have been commercially available for a long time. However, there are some technical difficulties, such as small substrate diameter, high wafer cost, expensive chip manufacturing cost, low yield rate, and toxicity. , In addition, these SWIR chips are not compatible with the CMOS process production lines, which require a separate production line to avoid inevitable contamination. Group IV Ge (Sn) semiconductor material was regarded as one of the most promising candidates to overturn the current SWIR imaging technology due to their excellent photoelectric response in the SWIR band and compatibility with the standard CMOS process, thereby making Ge an ideal absorption layer for the high-performance SWIR photodetectors. …”
Section: Introductionmentioning
confidence: 99%
“…Generally, photodetector structures are classified as: photoconductors, PN photodiodes, PIN photodiodes, avalanche photodiodes (APDs), phototransistors, Schottky barrier photodiodes, metal-semiconductor-metal (MSM) photodiodes, etc. [ 1 , 2 , 3 , 4 , 5 , 6 ]. As a class of extremely sensitive semiconductor detectors, APDs are capable of multiplying the charge carriers via impact ionization, increasing the photocurrent that flows in response to a certain light power.…”
Section: Introductionmentioning
confidence: 99%