Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers

Abstract

Improved dielectric properties of lead zirconate titanate (PZT) films deposited on a variety of foils using buffer layers are reported. Foils include titanium, stainless steel, and nickel with LaNiO3(LNO) buffer layers which were prepared by sol–gel processing. High dielectric constant (330 for stainless steel, 420 for titanium, and 450 for nickel foils), low dielectric loss (<2.2% for titanium and 8% for stainless steel), symmetric ferroelectric C–V characteristics and P–E curves were obtained. The LNO layers are shown to provide an effective diffusion barrier for Ni and Cr and to restrict oxide layer formation (i.e., TiOx or NiOx) between the PZT film and the metallic foils during annealing in air.

Thickness dependence of aerosol-deposited Pb(Zr,Ti)O3 films on stainless-steel sheet annealed by CO2 laser radiation

“…The Ni and/or Cr that are included in the SS can diffuse into the PZT films, and the ferroelectric and dielectric properties of the films might be deteriorated when the films are deposited directly onto SS and annealed at high temperature [3]. This has been observed in practical situations, where inadequate ferroelectric and piezoelectric properties are obtained, despite the insertion of buffer [4] and template [5] layers between the PZT film and the SS. We have succeeded in directly depositing PZT films that are thicker than 10 mm onto SS using an aerosol deposition method (ADM).…”

Copper Compatible Barium Titanate Thin Films for Embedded Passives

“…Though low loss, high capacitance density material can be prepared on Pt surfaces, this technology is not appropriate for embedded passives given the high cost of Pt, the inherent rigidity of typical silicon substrates, and the large series resistance associated with thin Pt electrodes. As an alternative approach, several groups have pursued preparation of high permittivity perovskite dielectrics on thin metal foils [7][8][9]. The refractoriness and flexibility of the foils provides a substrate amenable to lamination-based embedding, while maintaining compatibility with oxide thin film processing.…”

Epitaxial Integration of Ferroelectric BaTiO3 with Semiconductor Si: From a Structure- Property Correlation Point of View

“…It is known that both microstructure and properties of ferroelectric films are dependent greatly on fabrication processes [28][29][30][31]. The extrinsic parameters are also assumed to be responsible for variations in microstructure dependence of ferroelectricty, and might be the reason for a broad dispersion in some data such as critical size below which ferroelectricity is eradicated.…”