Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping

Yang, Xiaoguang; Wang, Kefan; Gu, Yü; Ni, Haiqiao; Wang, Xiaodong; Yang, Tao; Wang, Zhanguo

doi:10.1016/j.solmat.2013.02.005

Cited by 71 publications

(49 citation statements)

References 19 publications

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“…We believe this continuum tailing states superposed with QD and WL induced confined energy states within the forbidden band function as an efficient carrier relaxation and collection pathway [6][7][8] . A slight enhancement of Jsc, accompanied by a degradation of Voc [6][7][8][9][10][11][12] , under one sun illumination and room temperature conditions can be completely explained by a single-photon absorption process via below-bandgap states including both quantum confined states and tailing states. The degradation of Voc is related to an increased dark current resulting from a direct carrier collection/relaxation via the tailing states.…”

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confidence: 99%

Non-resonant below-bandgap two-photon absorption in quantum dot solar cells

Dagenais

2015

Applied Physics Letters

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Abstract:We are the first to show with clear experimental results that photons that have energy lower than the transition energy between quantum dots states and valance band can still contribute greatly to the photocurrent via both one-photon absorption process (1PA) and two-photon absorption process (2PA).The tailing states function as both the energy states for low energy photon absorption and the photocarriers extraction pathway. One of the biggest advantages of our method is that it can clearly differentiate the photocurrent due to 1PA process and 2PA process. Both 1PA and 2PA photocurrent generation efficiency in an InAs/GaAs QD device with photon excitation at 1550 nm have been quantitatively evaluated.

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confidence: 99%

Non-resonant below-bandgap two-photon absorption in quantum dot solar cells

Dagenais

2015

Applied Physics Letters

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“…Recently, the recovery of V OC in n-doped QDSCs has been attributed to reduce nonradiative recombination via QD states. 16,26,27 Thus, we believe that n-doping plays an important role in controlling the optical processes via QD states and also in reducing the nonradiative processes.…”

Section: Effect Of Si Doping On Inas/gaas Quantum Dots Solar Cell Chamentioning

confidence: 99%

“…6,[9][10][11] The third stage is to realize partially filled or ideally half-filled IB states to maximize the photocurrent generation by two-step photon absorption. Martí et al 9 and the works that follow [12][13][14][15][16][17][18][19] have employed the modulation-doping technique to fabricate QD-IBSCs, in which each GaAs barrier/spacer layer was delta (δ)-doped with Si with a sheet density equal to or larger than the InAs QDs areal density. On the other hand, Strandberg and Reenaas 20 have performed a simulation and have shown that under radiative limit, IB must be partially filled by means of doping within a reasonable optical length to achieve high efficiency if QD-IBSCs were to be operated under one sun condition.…”

Section: Introductionmentioning

confidence: 99%

“…For SC application, an enhancement of short-circuit current density (J SC ) in δ-doped quantum dots solar cells (QDSCs) 5,15,19 and recovery of V OC in direct-doped QDSCs have been observed. 16,26,27 The purpose of this work is to investigate the effect of Si-doping density, Si-doping methods by both the modulation/δ-doping, and the direct doping, and the sunlight concentration on the performance of InAs/GaAs QDSCs. Particular attention is paid to study the effect of changing the filling ratio of IB states by the Si doping and the photofilling by sunlight concentration on recovery of V OC from the viewpoint of understanding and demonstrating the control of filling ratio of IB in SC operation.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Si doping and sunlight concentration on the performance of InAs/GaAs quantum dot solar cells

et al. 2017

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Abstract. For intermediate band solar cells, the control of the carrier filling ratio in intermediate band is important to achieve high efficiency. We have investigated the effect of carrier doping of InAs/GaAs quantum dots (QDs) with Si and sunlight concentration on the quantum dots solar cell (QDSC) characteristics. The prefilling by Si doping of InAs/GaAs QDs was performed using two methods: modulation or δ-doping and direct doping. A gradual recovery in the open-circuit voltage with increasing Si doping concentration was observed, and it suggested a decrease of recombination via Si-doped QD states. Under high-concentrated sunlight illumination, QD states were additionally filled with photocarriers, and the open-circuit voltage increased nonlinearly with concentration ratio in both the nondoped and Si-doped QDSCs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…Figure 2 (b) shows that any further increase in the Si doping level results in a dramatic decrease in the PL intensity. This can be due the presence of too many Si atoms, which can cause destruction of the crystal lattice of the InAs QDs and formation of non-radiative recombination centres [13]. …”

Section: Optical Characteristicsmentioning

confidence: 99%

Si-Doped InAs/GaAs Quantum Dot Solar Cell with Alas Cap Layers

Kim

Tang

et al. 2017

E3S Web Conf.

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In this work, the effect of Si doping on InAs/GaAs quantum dot solar cells with AlAs cap layers is studied. The AlAs cap layers suppress the formation of the wetting layer during quantum dot growth. This helps achieve quantum dot state filling, which is one of the requirements for strong sub-bandgap photon absorption in the quantum dot intermediate band solar cell, at lower Si doping density. Furthermore, the passivation of defect states in the quantum dots with moderate Si doping is demonstrated, which leads to an enhancement of the carrier lifetime in the quantum dots, and hence the open-circuit voltage.

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Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping

Cited by 71 publications

References 19 publications

Non-resonant below-bandgap two-photon absorption in quantum dot solar cells

Non-resonant below-bandgap two-photon absorption in quantum dot solar cells

Effect of Si doping and sunlight concentration on the performance of InAs/GaAs quantum dot solar cells

Si-Doped InAs/GaAs Quantum Dot Solar Cell with Alas Cap Layers

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