Improved efficiency of n-ZnO/p-Si based photovoltaic cells by band offset engineering

Pietruszka, R.; Schifano, R.; Krajewski, T.; Witkowski, B.S.; Kopalko, K.; Wachnicki, Ł.; Zielony, E.; Gwóźdź, Katarzyna; Biegański, P.; Płaczek‐Popko, E.; Godlewski, M.

doi:10.1016/j.solmat.2015.12.018

Cited by 70 publications

(28 citation statements)

References 23 publications

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“…We have recently reported the experimental value of V OC as 260 mV after preparing several samples of n‐ZnO/p‐Si HJSC by depositing intrinsic ZnO on p‐Si wafers by RF magnetron sputtering . This value of V OC is very close to the recently reported values 292 mV and 257 mV but much lower than the values reported by other researchers earlier as 520 mV, 350 mV, 400 mV, and 330 mV proving discrepancies in V OC values of n‐ZnO/p‐Si HJSC stated in the literature.…”

Section: Introductionsupporting

confidence: 72%

“…Contemporarily, we theoretically proved that efficiency as high as 19% can be achieved by n‐ZnO/p‐Si HJSC with the fabrication cost much lower than conventional Si solar cells . The best experimental efficiency of 7.1% for n‐ZnO/p‐Si HJSC is recently reported by Pietruszka et al using atomic layer deposition . Using the model proposed by Knutsen et al, they have incorporated Mg in ZnO to reduce conduction band offset between ZnO and Si that resulted in higher conversion efficiency.…”

Section: Introductionmentioning

confidence: 57%

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Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Hussain

2017

Progress in Photovoltaics

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Several research groups are currently working on n-ZnO/p-Si heterojunction solar cell, and recently, Pietruszka et al [Sol. Energ. Mat. Sol. Cells 147 (2016) 164-170] has reported the highest efficiency of 7.1% for this structure. The main challenge is to enhance the open circuit voltage up to theoretically predicted value of >0.6 V. This paper reports >20% improvement in open circuit voltage of n-ZnO/p-Si solar cell by depositing amorphous-ZnO at the interface at room temperature that possibly improves the passivation and/or avoids oxide formation at the interface during ZnO deposition. Two other materials, aluminum nitride and amorphous-Si, have also been used as buffer layers to evaluate their effect on suppression of interface states. Furthermore, additional advantage of ZnO as an antireflector has been experimentally verified for different thicknesses of ZnO film.

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Section: Introductionsupporting

confidence: 72%

Section: Introductionmentioning

confidence: 57%

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Hussain

2017

Progress in Photovoltaics

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“…One of the most commonly used semiconductors, zinc oxide (ZnO), has been applied in a variety of photovoltaic solar cells, such as Si [1], III-V [2], CdTe [3], OPV [4], perovskites [5], Cu 2 O [6], Kesterites [7] and Chalcopyrites [8]. With some tuning, this material can be used in different contact roles, including heterojunction partners (a.k.a.…”

Section: Introductionmentioning

confidence: 99%

Combinatorial sputtering of Ga-doped (Zn,Mg)O for contact applications in solar cells

Rajbhandari

Bikowski

Perkins

et al. 2017

Solar Energy Materials and Solar Cells

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Development of tunable contact materials based on environmentally friendly chemical elements using scalable deposition approaches is necessary for existing and emerging solar energy conversion technologies. In this paper, the properties of ZnO alloyed with magnesium (Mg), and doped with gallium (Ga) are studied using combinatorial thin film experiments. As a result of these studies, the optical band gap of the sputtered Zn 1-x Mg x O thin films was determined to vary from 3.3 to 3.6 eV for a compositional spread of Mg content in the 0.04 < x < 0.17 range. Depending on whether or not Ga dopants were added, the electron concentrations were on the order of 10 17 cm -3 or 10 20 cm -3 , respectively. Based on these results and on the Kelvin Probe work function measurements, a band diagram was derived using basic semiconductor physics equations. The quantitative determination of how the energy levels of Gadoped (Zn,Mg)O thin films change as a function of Mg composition presented here, will facilitate their use as optimized contact layers for both Cu 2 ZnSnS 4 (CZTS), Cu(In,Ga)Se 2 (CIGS) and other solar cell absorbers.

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“…3,4 Cheap silicon wafers have been used as a substrate to lower the production costs. Once the properties of the material are characterized, further optimization of the heterojunctions will be possible.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Defects Origin in p-Type Si for Solar Applications

Gwóźdź

Płaczek‐Popko

Mikosza

et al. 2017

Journal of Elec Materi

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In order to improve the efficiency of a solar cell based on silicon, one must find a compromise between its price and crystalline quality. That is precisely why the knowledge of defects present in the material is of primary importance. This paper studies the defects in commercially available cheap Schottky titanium/gold silicon wafers. The electrical properties of the diodes were defined by using current-voltage and capacitance-voltage measurements. Low series resistance and ideality factor are proofs of the good quality of the sample. The concentration of the acceptors is in accordance with the manufacturer's specifications. Deep level transient spectroscopy measurements were used to identify the defects. Three hole traps were found with activation energies equal to 0.093 eV, 0.379 eV, and 0.535 eV. Comparing the values with the available literature, the defects were determined as connected to the presence of iron interstitials in the silicon. The quality of the silicon wafer seems good enough to use it as a substrate for the solar cell heterojunctions.

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Improved efficiency of n-ZnO/p-Si based photovoltaic cells by band offset engineering

Cited by 70 publications

References 23 publications

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Combinatorial sputtering of Ga-doped (Zn,Mg)O for contact applications in solar cells

Investigation of Defects Origin in p-Type Si for Solar Applications

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