Improved Electrical and Optical Properties of Vertical GaN LEDs Using Fluorine-Doped ITO/Al Ohmic Reflectors

Lee, Wan Ho; Chae, Dong Ju; Kim, Dong Yoon; Kim, Tae Geun

doi:10.1109/jqe.2011.2161271

Cited by 9 publications

(1 citation statement)

References 26 publications

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“…The consequent high contact resistance and low light-extraction efficiency (LEE) degrades the long-term reliability, high forward voltage, and very low external quantum efficiency (EQE). To ameliorate these drawbacks, silicon-glass overcaps and hermetic packaging have been used extensively [19][20][21][22][23][24][25][26][27][28][29]. However, the reflectivity of ceramic package decreased rapidly in Deep-UV region [30][31][32][33][34].…”

Section: Introductionmentioning

confidence: 99%

Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

et al. 2018

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To realize high-efficiency AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency (LEE) is crucial. This paper proposes an aluminum-based sidewall reflector structure that could replace the conventional ceramic-based packaging method. We design optimization simulations and experimental results demonstrated the light power output could be enhanced 18.38% of DUV-LEDs packaged with the aluminum-based sidewall.

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Section: Introductionmentioning

confidence: 99%

Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

et al. 2018

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A Universal Method of Producing Transparent Electrodes Using Wide‐Bandgap Materials

Kim

et al. 2013

Adv Funct Materials

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A UV light‐emitting diode (LED) is an eco‐friendly optical source with diverse applications. However, currently, the external quantum efficiency (EQE) of AlGaN‐based UV LEDs, particularly in the UV‐C band (<280 nm), is very low (<11%) mainly due to a large optical absorption via p‐GaN contact layers. A direct Ohmic contact to p‐AlGaN layers should be obtained using UV‐transparent conductive electrodes (TCEs) to solve this problem. A universal method is presented here to make such contact using electrical breakdown, with wide‐bandgap materials, to form conductive filaments (CFs), providing a current path between the TCEs and the p‐(Al)GaN layers. The contact resistance between the TCEs and the p‐GaN layers (or p‐AlGaN) is found to be on the order of 10−5 Ω cm2 (or 10−3 Ω cm2), while optical transmittance is maintained up to 95% for AlN‐based TCEs at 250 nm. These findings could be a critical turning point delivering a breakthrough in UV LED technologies.

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Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode

Kim

Han

Seong

2014

Current Applied Physics

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Improved Electrical and Optical Properties of Vertical GaN LEDs Using Fluorine-Doped ITO/Al Ohmic Reflectors

Cited by 9 publications

References 26 publications

Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

Enhancing the Light-Extraction Efficiency of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes by Optimizing the Diameter and Tilt of the Aluminum Sidewall

A Universal Method of Producing Transparent Electrodes Using Wide‐Bandgap Materials

Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode

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