Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode

Kim, D.; Han, Jeong-Yeol; Seong, Tae Yeon

doi:10.1016/j.cap.2014.06.012

Cited by 4 publications

(1 citation statement)

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“…The main challenge of developing high-efficiency UV LED chip is to realize the reflective electrode with high reflectivity, good contact and stable operation in 365 nm band. There have been numerous reports on various types of ultraviolet mirrors, including metal mirrors, distributed Bragg reflectors (DBRs), omnidirectional reflectors (ODRs), and tin-doped indium oxide (ITO)/Al reflectors (Lobo et al, 2010;Lin et al, 2010;Takehara et al, 2012;Choi et al, 2013;Nakashima et al, 2013;Chong and Lau, 2014;Kim et al, 2014;Kuo et al, 2015). However, the UV Mirrors reported in the literature still had the problems of low reflectivity in 365 nm band, poor electrical performance in contact with p-AlGaN and bad heat dissipation performance.…”

Section: Introductionmentioning

confidence: 99%

Design and Performance of Ultraviolet 368-nm AlGaN-Based Flip-Chip High-Voltage LEDs with Epitaxial Indium Tin Oxide/Al Reflective Mirror and Symmetry Electrode Arrangement

Wang

Lao

et al. 2022

Front. Mater.

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In this letter, we describe the design and fabrication of high-power AlGaN-based ultraviolet (UV) flip-chip high-voltage light-emitting diodes (LEDs) operating at 368 nm with an epitaxial indium tin oxide (ITO)/Al reflecting mirror and symmetry electrode layout. Metal-organic chemical vapor deposition (MOCVD) was used to grow an ITO thin film as a transparent electrode on the LED surface. At 365 nm, epitaxial ITO thin films exhibited a transmittance of up to 93.6%. Additionally, the epitaxial ITO/Al reflective mirror has a reflectance of 81.2% at 365-nm. To investigate the electrical characteristics, four types of HV-LED micro-cells were constructed with varying n-type mesa structures and p-type interconnect electrodes. We demonstrated a forward voltage (Vf) of 7.86 V at 350 mA with a 2 × 2 mico-cells high-voltage ultraviolet 368-nm flip-chip LED after optimising electrode structure and device process.

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