Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer

Lee, Jin Bok; Jeong, Sang Yong; Park, Bong Jun; Choi, Chong Won; Hong, Kwon; Whang, Sung Jin; Seong, Tae Yeon

doi:10.1016/j.spmi.2009.12.011

Cited by 4 publications

(3 citation statements)

References 22 publications

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“…12 Previous reports have proven that Ni 0.9 Co 0.1 thin films or Ni 0.5 Co 0.5 interlayers have the merit to improve the electrical and thermal properties. 13,14 In this report, a Ni 90 Co 10 alloy was employed in the formation of metal silicide and germanosilicide as the contact layer for Si and SiGe. The resistivity and structure evolution of NiCo silicide and germanosilicide were investigated, as well as the counterparts of Ni and NiPt.…”

Section: Introductionmentioning

confidence: 99%

A novel silicide and germanosilicide by NiCo alloy for Si and SiGe source/drain contact with improved thermal stability

Cheng

Hsin

2014

CrystEngComm

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NiCo (10 at.% of Co) alloy was employed in the formation of metal silicide and germanosilicide as the contact layer which can be used as future complementary metal-oxide-semiconductor source/drain contact. The resistivity and structure evolution of NiCo silicide and germanosilicide were investigated, and the performance of the NiCo silicide is better than conventional NiSi and comparable with NiPt silicides, as well as NiPt germanosilicide below 700°C. The thermal stability and enhanced sheet resistance of NiCo silicide and germanosilicide were found to be up to 900°C and 700°C, respectively. The low sheet resistance at high temperature was attributed to the low-temperature CoSi by enhancing the thermal stability and uniformity of the Ge. The influence of Ge concentration was studied in different Si 1−x Ge x substrates, and the low sheet resistance can be reliable up to 650°C.

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Section: Introductionmentioning

confidence: 99%

A novel silicide and germanosilicide by NiCo alloy for Si and SiGe source/drain contact with improved thermal stability

Cheng

Hsin

2014

CrystEngComm

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“…Ni silicide has several advantages over Ti silicide and Co silicide such as low resistivity (³14 µ³0cm), low thermal budget, no bridging failure properties, less mechanical stress, no narrow line effect, and less Si consumption. [4][5][6][7] However, Ni silicide has poor thermal stability because of its morphological instability and phase transition to Ni disilicide (NiSi 2 , 35-50 µ³0cm) during thermal processes over 650 °C. [4][5][6][7] Therefore, improving its thermal stability has been a great challenge with Ni silicide.…”

Section: Introductionmentioning

confidence: 99%

“…[4][5][6][7] However, Ni silicide has poor thermal stability because of its morphological instability and phase transition to Ni disilicide (NiSi 2 , 35-50 µ³0cm) during thermal processes over 650 °C. [4][5][6][7] Therefore, improving its thermal stability has been a great challenge with Ni silicide. To improve the thermal stability of Ni silicide, various methods have been studied.…”

Section: Introductionmentioning

confidence: 99%

Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs

Oh¹,

Shin²,

Li³

et al. 2014

Jpn. J. Appl. Phys.

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In this paper, Ni silicide formed with a Ni/Er/Ni/TiN structure is proposed, and the thermal stability and electrical properties of the proposed Ni silicide with an Er interlayer in different positions are studied for application to source/drain of MOSFETs. Ni silicide with Ni/Er/Ni/TiN structures showed not only improved thermal stability but also lower sheet resistance than an Er/Ni/TiN structure. Moreover, proposed Ni/Er/Ni/TiN (2/2/ 11/10 nm) structure exhibited great barrier height and low ideality factor similar to the Er/Ni/TiN structure which could reduce the contact resistance between silicide and doped source/drain region. Therefore, proposed silicide using Ni/Er/Ni/TiN (2/2/11/10 nm) structure is promising for MOSFET source/drain due to better thermal stability, low sheet resistance, and excellent electrical properties.

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Size Effect in Physical and Other Properties of Nanostructured Coatings

Mahmood

2011

Nanocoatings

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Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer

Cited by 4 publications

References 22 publications

A novel silicide and germanosilicide by NiCo alloy for Si and SiGe source/drain contact with improved thermal stability

A novel silicide and germanosilicide by NiCo alloy for Si and SiGe source/drain contact with improved thermal stability

Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs

Size Effect in Physical and Other Properties of Nanostructured Coatings

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