Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter

Shin, Myeong-Cheol; Lee, Young Jae; Kim, Dong‐Hyeon; Jung, Sang Youn; Schweitz, Michael A.; Shin, Weon Ho; Oh, Jong‐Min; Park, Chulhwan; Koo, Sang‐Mo

doi:10.3390/ma14051296

Cited by 5 publications

(4 citation statements)

References 30 publications

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“…The mobility of carriers decreases exponentially with increasing temperature, and according to Equation ( 8), the conventional Ga 2 O 3 MOSFET has a 39% reduction in carrier mobility compared to the Ga 2 O 3 -on-SiC MOSFET. Similar results were reported in previous work, suggesting SiC hetero-substrate is a feasible method for reducing the self-heating effect [18,19,24,25].…”

Section: On-state Characteristicssupporting

confidence: 91%

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Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

et al. 2023

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Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility of up to 300 cm2V−1s−1, which is considered a promising candidate for next-generation power devices. However, its low thermal conductivity is reckoned to be a severe issue in the thermal management of high-power devices. The epitaxial integration of gallium oxide thin films on silicon carbide (SiC) substrates is a possible solution for tackling the cooling problems, yet premature breakdown at the Ga2O3/SiC interface would be introduced due to the relatively low breakdown strength of SiC (3.2 MV/cm). In this paper, the on-state properties as well as the breakdown characteristics of the Ga2O3-on-SiC metal-oxide-semiconductor field-effect transistor (MOSFET) were investigated by using the technology computer-aided design (TCAD) approach. Compared with the full-Ga2O3 MOSFET, the lattice temperature of the Ga2O3-on-SiC MOSFET was decreased by nearly 100 °C thanks to the high thermal conductivity of SiC. However, a breakdown voltage degradation of >40% was found in an unoptimized Ga2O3-on-SiC MOSFET. Furthermore, by optimizing the device structure, the breakdown voltage degradation of the Ga2O3-on-SiC MOSFET is significantly relieved. As a result, this work demonstrates the existence of premature breakdown in the Ga2O3-on-SiC MOSFET and provides feasible approaches to further enhance the performance of hetero-integrated Ga2O3 power devices.

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Section: On-state Characteristicssupporting

confidence: 91%

“…However, thanks to the progress in epitaxial technology, such a non-ideal factor would be relieved [22,23]. Previous studies mainly focused on the on-state performance of the Ga 2 O 3on-SiC MOSFET by considering the lattice self-heating effects but with little concentration on breakdown characteristics [18,19,24,25].…”

Section: Introductionmentioning

confidence: 99%

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

et al. 2023

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“…Several studies have been carried out in this regard. [78][79][80][81][82][83] A typical cross-section of the fabrication flows of gate oxide/SiC interface and its comparison of surface enhancement by nitrogen implantation is presented in Fig. 6.…”

Section: Growth Of Gate Oxides On Sicmentioning

confidence: 99%

“…Other similar and more recent studies include. [78][79][80] Oxidation techniques for the mitigation of the challenges of SiC/SiO 2 interface.-There are several methods that can be utilized as oxidation processes in order to surmount the structural limitations that are presently encountered by the SiC/SiO 2 system. Presently, the oxidation of SiC involves the release of C atoms, and therefore, a Si atom must also be released occasionally due to the density of Si in SiC, and its size when compared to that of SiO 2 .…”

Section: Growth Of Gate Oxides On Sicmentioning

confidence: 99%

Review—Gate Oxide Thin Films Based on Silicon Carbide

Odesanya

Ahmad²,

Andriyana³

et al. 2022

ECS J. Solid State Sci. Technol.

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A comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented. The SiC material, which is mostly employed as a base component in metal oxide semiconductor field effect transistors is very promising for its high voltage, high power, high temperature, and high breakdown field properties, features which have made it very attractive for use in power electronic devices over its counterparts in the field. Despite these great features, and the significant progress recorded in the past few years regarding the quality of the material, there are still some issues relating to optimization of the surface and interface processing. This review discusses the effect of surface modification and treatment as a means of enhancing the electrical performance of the SiC-based MOSFETs and identifies the challenges of controlling the density of dielectric/SiC interface trap that is needed to improve the values of mobility channels, and several oxidation techniques that could be used to surmount the structural limitations presently encountered by the SiC/silicon dioxide (SiO2). Reliability as a significant aspect of electronic structures was also discussed with emphasis on causes of their breakdown and possible solutions, especially in high thermal applications.

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Surface Adsorption and Air Damping Behavior of β‐Ga₂O₃ Nanomechanical Resonators

Sui,

Enamul Hoque Yousuf,

Liu

et al. 2024

Adv Materials Technologies

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Beta gallium oxide (β‐Ga2O3) has emerged as a highly promising semiconductor material with an ultrawide bandgap ranging from 4.5 to 4.9 eV for future applications in power electronics, optoelectronics, as well as gas and ultraviolet (UV) radiation sensors. Here, surface adsorption and air damping behavior of doubly clamped β‐Ga2O3 nanomechanical resonators are probed and systemically studied by measuring the resonance characteristics under different gas and pressure conditions. High responsivities of resonance to pressure are obtained by heating the devices up to 300 °C to induce an accelerated adsorption–desorption process. The initial surface conditions of the β‐Ga2O3 thin film play important roles in affecting the resonant behavior. UV ozone treatment proves effective in altering the initial surface conditions of β‐Ga2O3 nanosheets by eliminating physisorbed contaminants and filling oxygen vacancy defects residing on the surface, resulting in a consequential and discernible modification of the resonance behavior of β‐Ga2O3 nanomechanical resonators. The surface adsorption and desorption processes in β‐Ga2O3 demonstrate clear reversibility by exposing the UV treated β‐Ga2O3 to air. This study attains first‐hand information on how the surface conditions of β‐Ga2O3 affect its mechanical properties, and helps guide future development of transducers via β‐Ga2O3 nanoelectromechanical systems (NEMS) for pressure sensing applications, especially in harsh environments.

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Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter

Cited by 5 publications

References 30 publications

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Review—Gate Oxide Thin Films Based on Silicon Carbide

Surface Adsorption and Air Damping Behavior of β‐Ga₂O₃ Nanomechanical Resonators

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Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter

Cited by 5 publications

References 30 publications

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Breakdown Characteristics of Ga2O3-on-SiC Metal-Oxide-Semiconductor Field-Effect Transistors

Review—Gate Oxide Thin Films Based on Silicon Carbide

Surface Adsorption and Air Damping Behavior of β‐Ga2O3 Nanomechanical Resonators

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Product

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Surface Adsorption and Air Damping Behavior of β‐Ga₂O₃ Nanomechanical Resonators