Improved Electrical Performance of an Oxide Thin-Film Transistor Having Multistacked Active Layers Using a Solution Process

Kim, Deuk Jong; Kim, Dong Lim; Rim, You Seung; Kim, Chul Ho; Jeong, Woong Hee; Lim, Hyun Kyoung; Kim, Hyun Jae

doi:10.1021/am3008278

Cited by 81 publications

(80 citation statements)

References 22 publications

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“…Notably, this shows that the saturation mobility of the tri-layered TFT was more than four times that of the single-layered TFT. It is known that this improvement in mobility can be attributed to fill the pin-holes close to the dielectric layer and the dense AOS film, due to the over coating process [5,6]. In our results, only three times coating of the combustion sol-gel InZnO solution provided the high mobility, which was comparable to that in the previous report using a very low concentration of the precursor solution [6].…”

Section: Resultssupporting

confidence: 85%

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Enhanced Electrical Properties and Stability of Solution-processed Amorphous Oxide Thin Film Transistors with Multi-active Layers

2018

Korean J. Met. Mater.

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We investigated the electrical properties and gate bias stress stability of solution-processed amorphous oxide thin film transistors (TFTs) with multi-stacked active layers. With the multi-layered InZnO (In:Zn = 1:1), mobility was increased from 4.6 to 21.2 cm , SS of 0.65 V/decade, and good stability, with ΔV th under PBS and NBS of +1.2 and -1.2 V, respectively. Both the electrical properties and gate bias stress (GBS) stability were better with the InZnO/InGaZnO TFT than the single-layered InZnO TFT.

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Section: Resultssupporting

confidence: 85%

“…TFTs is related to AOS film density [5,6]. Voids can be created in the process of annealing the film.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Electrical Properties and Stability of Solution-processed Amorphous Oxide Thin Film Transistors with Multi-active Layers

2018

Korean J. Met. Mater.

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“…In previous spin-CS studies, very smooth surface topologies were achieved for thin (5-nm) single-layer/ multilayer films (ρ RMS = 0.2-0.5 nm) (2,16). However, thicker (20-to 50-nm) single-layer films are significantly more porous and rougher (ρ RMS > 1 nm) (2,16), reminiscent of conventional thick sol-gel oxide films (17)(18)(19)(20)(21). In this work, atomic force microscopy and SEM images show that optimized single-layer SCS growth yields smooth thicker oxide films ( 5 at low operating voltages of 2 V owing to the enhanced capacitance of the gate dielectric ( Fig.…”

Section: Significancementioning

confidence: 98%

“…3 A and B and Table 2). The sol-gel TFT performance is poor (μ ∼ 10 −3 cm 2 V −1 s −1 ), because 300°C/30-min annealing is inadequate for densification (17,20 , T a = 300°C). The sputtered IGZO device metrics are typical values achieved in fabrication (FAB) lines using a 300-nm-thick SiOx layer.…”

Section: Significancementioning

confidence: 99%

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Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Smith²,

Zhou

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

181

186

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Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. etal-oxide (MO) semiconductors, especially in amorphous phases, represent an appealing materials family for next generation electronics owing to their high carrier mobilities, good environmental/thermal stability, mechanical flexibility, and excellent optical transparency (1-3). MO films complement organic semiconductors (4, 5), carbon/oxide nanomaterials (6), and flexible silicon (7, 8) for enabling new technologies, such as flexible displays and printed sensors. For fabricating high-performance electronics with acceptable fidelity, conventional processes require capital-intensive physical/chemical vapor deposition techniques. Capitalizing on the solubility of MO precursors in common solvents, solution methods have been used to fabricate semiconducting MO layers for thin-film transistors (TFTs). However, the fabrication process and field-effect mobilities of these TFTs are not competitive with the corresponding vapor-deposited (e.g., sputtered) devices (9), and developing routes to solution-derived MO TFTs with technologically relevant thicknesses and performance comparable to state of the art vapor-deposited devices is a critical milestone for MO electronics evolution.Sol-gel techniques are used extensively for MO film growth, including films for high-performance TFTs (10-13). However, the required sol-gel condensation, densification, and impurity removal steps typically require >400-500°C processing temperatures, which are incompatible with inexpensive glasses and typical flexible plastic substrates (14). Progress toward significantly reducing the processing temperatures of sol gel-derived MO films has afforded excellent TFT mobilities; however, achieving both reproducible high-performance and stable device operation remains an unsolved issue for Ga-containing materials (15). Sol-gel on-a-chip for indium-zinc-oxide (3) and deep-UV ...

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Solution‐Processed Metal‐Oxide Thin‐Film Transistors for Flexible Electronics

Kim

2022

Amorphous Oxide Semiconductors

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Improved Electrical Performance of an Oxide Thin-Film Transistor Having Multistacked Active Layers Using a Solution Process

Cited by 81 publications

References 22 publications

Enhanced Electrical Properties and Stability of Solution-processed Amorphous Oxide Thin Film Transistors with Multi-active Layers

Enhanced Electrical Properties and Stability of Solution-processed Amorphous Oxide Thin Film Transistors with Multi-active Layers

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Solution‐Processed Metal‐Oxide Thin‐Film Transistors for Flexible Electronics

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