Improved electrical properties of silicon-incorporated anodic niobium oxide formed on porous Nb–Si substrate

Tanvir, Muhammad Tauseef; Aoki, Yoshitaka; Habazaki, H.

doi:10.1016/j.apsusc.2009.05.094

Cited by 9 publications

(1 citation statement)

References 32 publications

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“…There is growing interest in amorphous oxides for use as functional materials in a wide range of applications in the field of electrical, optical, chemical, and environmental engineering. For example, amorphous Al 2 O 3 (a-Al 2 O 3 ), a-Ta 2 O 5 , and a-Nb 2 O 5 are considered good coating materials for electrical, [1][2][3][4] biomedical, 5 and optical devices [6][7][8] because of their excellent dielectric, corrosion resistance, and reflective properties, respectively. For practical uses, the thermal stability of the layer is an important factor.…”

Section: Introductionmentioning

confidence: 99%

Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

Nakamura

Toda

Tsukui

et al. 2014

Journal of Applied Physics

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was investigated along with structural analysis in terms of pair distribution function (PDF). The low activation energy, $1.2 eV, for diffusion in the oxides suggests a single atomic jump of oxygen ions mediated via vacancy-like defects. However, the pre-exponential factor for a-Ta 2 O 5 and a-Nb 2 O 5 with lower bond energy was two orders of magnitude larger than that for a-Al 2 O 3 with higher bond energy. PDF analyses revealed that the short-range configuration in a-Ta 2 O 5 and a-Nb 2 O 5 was more broadly distributed than that in a-Al 2 O 3 . Due to the larger variety of atomic configurations of a-Ta 2 O 5 and a-Nb 2 O 5 , these oxides have a higher activation entropy for diffusion than a-Al 2 O 3 . The entropy term for diffusion associated with short-range structures was shown to be a dominant factor for diffusion in amorphous oxides. V C 2014 AIP Publishing LLC. [http://dx

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Section: Introductionmentioning

confidence: 99%

Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

Nakamura

Toda

Tsukui

et al. 2014

Journal of Applied Physics

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First Observation on S-doped Nb2O5 Nanostructure Thin Film Coated on Carbon Fiber Paper Using Sol–Gel Dip-Coating: Fabrication, Characterization, Visible Light Sensitization, and Electrochemical Properties

Habibi

Mokhtari

2011

J Inorg Organomet Polym

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Dielectric properties of anodic films on sputter-deposited Ti–Si porous columnar films

Tanvir

Fujii

Aoki

et al. 2011

Applied Surface Science

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For electrolytic capacitor application of the single-phase Ti alloys containing supersaturated silicon, which form anodic oxide films with superior dielectric properties, porous Ti-7 at% Si columnar films, as well as Ti columnar films, have been prepared by oblique angle magnetron sputtering on to aluminum substrate with a concave cell structure to enhance the surface area and hence capacitance. The deposited films of both Ti and Ti-7at% Si have isolated columnar morphology with each column revealing nanogranular texture. The distances between columns are ~500 nm, corresponding to the cell size of the textured substrate and the gaps between columns are 100 -200 nm. When the porous Ti-7 at% Si film is anodized at a constant current density in ammonium pentaborate electrolyte, the growth of a uniform amorphous oxide film continues to ~35 V, while it is limited to less than 6 V on the porous Ti film. The maximum voltage of the growth of uniform amorphous oxide films on the Ti-7 at% Si films is similar for 2 both the flat and porous columnar films, suggesting little influence of surface roughness on the amorphous-to-crystalline transition of growing anodic oxide under the high electric field. Due to the suppression of crystallization to sufficiently high voltages, the anodic oxide films formed on the porous Ti-7 at% Si film shows markedly improved dielectric properties, in comparison with those on the porous Ti film.

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Improved electrical properties of silicon-incorporated anodic niobium oxide formed on porous Nb–Si substrate

Cited by 9 publications

References 32 publications

Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

First Observation on S-doped Nb2O5 Nanostructure Thin Film Coated on Carbon Fiber Paper Using Sol–Gel Dip-Coating: Fabrication, Characterization, Visible Light Sensitization, and Electrochemical Properties

Dielectric properties of anodic films on sputter-deposited Ti–Si porous columnar films

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