Improved electron transport properties of InSb quantum well structure using stepped buffer layer for strain reduction

Improved Electron Transport Properties of Ga1–xInxSb Quantum Well Channel Using Strained‐Al0.40In0.60Sb/Al1–yInySb Stepped Buffer

“…On the other hand, the N s is almost constant with increasing x , which resulted from compensating the decrease in DOS with the increase in the QW depth. In our previous InSb HEMT, μ was 17 700 cm 2 V −1 s −1 and N s was 1.06 × 10 12 cm −2 . The N s value of Ga 0.22 In 0.78 Sb QW increased by a factor of 196% compared to that of InSb QW, which indicates that the present GaInSb QW is effective to increase N s .…”

“…Desplanque et al reported the electronic properties of the Al 0.56 In 0.44 /Ga 0.5 In 0.5 Sb QWs on InP substrates grown by MBE. The maximum μ of 25 000 cm 2 V −1 s −1 with N s of 1.5 × 10 12 cm −2 was obtained at 300 K . It is presumed that the quality of the crystal was improved using an InP substrate having a closer lattice constant than a GaAs substrate.…”

“…However, the compressive strain applied to the InSb channel increases and the lattice mismatch at the InSb/AlInSb interface is enhanced. In our previous work, we reported InSb HEMT using strained stepped buffer to solve the aforementioned issues . Recently, we have developed novel Ga 1– x In x Sb QW channel as an alternative to the InSb QW .…”

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

“…7,[15][16][17][18] It has been reported that most of the dislocations induced by the lattice mismatch could be confined at the interface of InSb/GaAs by utilizing these growth technique, 16) and that high mobility characteristics have been realized in relatively thick InSb layers grown on GaAs(100). 8,15,18,19) However, three-dimensional islands are often formed at the initial stage of the InSb growth, which degrade the structural and electrical properties of thinner InSb films. 20,21) Since device structures with thin InSb layer are effective in reducing the cost, and are also preferred for specific applications using magnetoresistance, 8,20) the initial island growth should be suppressed.…”