Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE

Fissel, A.; Pfennighaus, K.; Kaiser, Ute; Kräußlich, J.; Hobert, H.; Schröter, Bernd; Richter, W.

doi:10.4028/www.scientific.net/msf.264-268.255

Cited by 12 publications

(9 citation statements)

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“…These drawbacks have hampered the investigation of the heteroepitaxy of 3C-SiC on (111) oriented silicon substrates, limiting the number of published works [17,[19][20][21]. It must be emphasized that the warping of the wafer is the most severe problem when targeting the use of 3C-SiC films as templates.…”

Section: Growth Of 3c-sic Films On Si(111)mentioning

confidence: 97%

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Cordier

Portail

Chenot

et al. 2008

Journal of Crystal Growth

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Section: Growth Of 3c-sic Films On Si(111)mentioning

confidence: 97%

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Cordier

Portail

Chenot

et al. 2008

Journal of Crystal Growth

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“…Already in 1983 Nishino et al [1] reported about the large area growth of 3C-SiC on silicon by chemical vapour deposition (CVD). There is a trend nowadays to the use the molecular-beam-epitaxy (MBE) [2][3][4][5][6][7] over the CVD [1,8,9] for SiC deposition. Compared to the CVD, the MBE method has the potential to produce SiC layers at lower temperature and with higher purity [5].…”

Section: Introductionmentioning

confidence: 99%

Different void shapes in Si at the SiC thin film/Si(111) substrate interface

Jinschek¹,

Kaiser²,

Richter³

2001

Journal of Electron Microscopy

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The shape of interfacial voids formed in the epitaxial SiC/Si(111) heterosystem just underneath the SiC film has been investigated using optical microscopy and transmission electron microscopy (TEM). SiC films are grown on Si(111) substrates at two different substrate temperatures (specimen type 1 at 850°C, specimen type 2 at 1050°C) using solidsource molecular-beam epitaxy (MBE). At 850°C substrate temperature the well-known triangular void shape with primary {111} facets is formed in the Si substrate confirming the results already reported by Learn and Khan in 1970. When growing at 1050°C substrate temperature a new void shape showing a hexagonal appearance in the plan-view direction is found. By indexing the hexagonal void planes, other facets with higher surface energies than the usual {111} type facets have been observed leading to a void shape near the equilibrium void shape in a cubic crystal. As in the case of the triangular shaped voids, the formation process of the hexagonal shaped voids should start from the {111} planes, however, due to the higher substrate temperature, planes with higher surface energies are formed in addition.

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“…The samples grown on the carbonized layers formed by method 1 are characterized by a rougher surface morphology, smaller terrace width, and exhibit a smaller interface width and full width at half maximum of the (111) SiC XRD peak (FWHM). The observed values measured in the q-2q scan are better than the values obtained for films with similar thickness grown by solid source MBE [4] and gas source MBE [43], are comparable with values reported for thicker layers grown by solid source molecular beam epitaxy [13] and are better than the values obtained in the case of low [8,9,44] and high [45] temperature CVD. The larger roughness on layers with C-faces might be an evidence for the different incorporation mechanisms of the deposited atoms and the smaller surface diffusion length compared to the Si-face.…”

Section: Hydrogen Poor and Rich Carbonization Environmentsmentioning

confidence: 37%

“…For this reason most research is focused to improve the crystallographic properties and reduce the residual stress of the SiC layer. This can be achieved by using one of the following substrate modification methods: 1. reduction of the growth temperature by using high reactive carbon precursor and/or atomic layer epitaxial techniques [4][5][6][7][8][9][10][11][12][13][14], 2. use of silicon on insulator substrates [15], 3. application of SMART-CUT or wafer bonding technologies [16][17][18], 4. use of porous and nanostructured silicon [18][19][20], 5. modification of the silicon substrate with group IV elements [21][22][23][24]. Only the latter method is applicable if the electrical properties of the heterojunction are of interest.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Surface Preparation on the Properties of SiC on Si(111)

Pezoldt

Schröter

Cimalla

et al. 2001

phys. stat. sol. (a)

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The silicon (111) surface was converted into silicon carbide by using: 1. propane diluted in hydrogen and rapid thermal processing, 2. elemental carbon deposited onto the silicon surface by solid source molecular beam epitaxy and subsequent annealing, i.e. conversion in a hydrogen poor environment, 3. modification of the silicon surface by Ge predeposition prior to elemental carbon deposition. These methods were compared according to their influence on the structure, morphology and electronic properties of the SiC/Si(111) heteroepitaxial system. It was found that the conversion in a hydrogen rich environment leads to the formation of a carbon ( 1 1 1 1 1 1) silicon carbide face, whereas a silicon (111) silicon carbide face was formed under hydrogen poor conditions. Germanium predeposition led to an improvement of the structural morphological and electrical properties of the silicon carbide-silicon heteroepitaxial system.

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Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE

Cited by 12 publications

References 0 publications

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

AlGaN/GaN high electron mobility transistors grown on 3C-SiC/Si(111)

Different void shapes in Si at the SiC thin film/Si(111) substrate interface

The Influence of Surface Preparation on the Properties of SiC on Si(111)

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