Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules

Merten, J.; Asensi, J.M.; Voz, C.; Shah, A.; Platz, R.; Andreu, J.

doi:10.1109/16.658676

Cited by 197 publications

(134 citation statements)

References 8 publications

Supporting

Mentioning

130

Contrasting

Unclassified

Order By: Relevance

“…Variable Illumination Measurement (VIM) measurements [9]. This plot is usually a straight line for moderate illuminations and can exhibit a moderate saturation for high illumination levels [9]. The expected linear behaviour could be seen in all samples labelled A, C and D. On the contrary, the series resistance (the limit of R oc at high illumination levels) of sample B was much higher and no saturation was observed at high J sc values.…”

Section: Resultsmentioning

confidence: 96%

“…Therefore, in order to avoid misinterpretations originated by these effects, we deposited full p-i-n structures so that a direct correlation between the device performance and the deposition conditions could be made. Variable Illumination Measurement (VIM) measurements [9]. This plot is usually a straight line for moderate illuminations and can exhibit a moderate saturation for high illumination levels [9].…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Control of doped layers in p–i–n microcrystalline solar cells fully deposited with HWCVD

Fonrodona

Soler

Escarré

et al. 2004

Journal of Non-Crystalline Solids

Self Cite

View full text Add to dashboard Cite

In this paper, the influence of the deposition conditions on the performance of p-i-n microcrystalline silicon solar cells completely deposited by Hot-Wire Chemical Vapour Deposition is studied. With this aim, the role of the doping concentration, the substrate temperature of the p-type layer and of amorphous silicon buffer layers between the p/i and i/n microcrystalline layers is investigated. Best results are found when the p-type layer is deposited at a substrate temperature of 125ºC. The dependence seen of the cell performance on the thickness of the i layer evidenced that the efficiency of our devices is still limited by the recombination within this layer, which is probably due to the charge of donor centres most likely related to oxygen.

show abstract

Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Control of doped layers in p–i–n microcrystalline solar cells fully deposited with HWCVD

Fonrodona

Soler

Escarré

et al. 2004

Journal of Non-Crystalline Solids

Self Cite

View full text Add to dashboard Cite

show abstract

“…1). In reality, this holds only for an intermediate light intensity range since at smaller intensities the I(V)s are dominated by shunts or by the dark I(V) whereas at larger intensities the series resistance has the largest a ect [8].…”

Section: Constraints On Theorymentioning

confidence: 99%

Influence of electric field distortion and i-layer quality on the collection function of drift-driven a-Si:H solar cells

Hof

Wyrsch

Shah

2000

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

A re®ned analytical model describing the photocurrent collection in amorphous silicon solar cells is presented. Thereby, variations of the electric ®eld within the intrinsic layer are formally taken into account and it is shown that they can be summarized in a Ôform factorÕ, u, which reduces the e ective mobility recombination time product of the interior. Based on this model an experimental technique is introduced which aims to determine the transport quality of the intrinsic layer of amorphous silicon solar cells. Two series of cells are analyzed using this technique and the results are compared to transport measurements carried out on equivalent intrinsic layers deposited on glass.

show abstract

“…Variable Illumination Measurement technique (VIM) allows the determination of the µτ eff [26] from which the defect density within the active layer of the device can be evaluated.…”

Section: Light Induced Degradationmentioning

confidence: 99%

“…Stability of the devices during light soaking process was evaluated from the evolution of the µτ eff obtained from VIM measurements [26]. Fig.…”

Section: Light Induced Degradationmentioning

confidence: 99%

Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

et al. 2006

Self Cite

View full text Add to dashboard Cite

Improved equivalent circuit and analytical model for amorphous silicon solar cells and modules

Cited by 197 publications

References 8 publications

Control of doped layers in p–i–n microcrystalline solar cells fully deposited with HWCVD

Control of doped layers in p–i–n microcrystalline solar cells fully deposited with HWCVD

Influence of electric field distortion and i-layer quality on the collection function of drift-driven a-Si:H solar cells

Progress in single junction microcrystalline silicon solar cells deposited by Hot-Wire CVD

Contact Info

Product

Resources

About