Improved facilities for ion beam surface analysis at the University of Surrey

Mynard, J.E.; Jeynes, C.; Thornton, J. A.; Way, Amy Mosig; Webb, Rebecca; Albury, David; Hemment, P.L.F.; Stephens, K.G.

doi:10.1016/0168-583x(85)90644-5

Cited by 9 publications

(3 citation statements)

References 2 publications

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“…The sample plate was attached to the liquid N 2 cooled copper stage in the scanning micro-beam target chamber of the Van de Graaff accelerator [26,27] based at the University of Surrey and evacuated. For most runs the sample was bombarded normal to its surface for 15 min at a beam current of 1 nA, by a focused scanning 1.3 MeV circular 3 He beam of 10 mm diameter at the sample surface.…”

Section: Ion Beam Analysismentioning

confidence: 99%

A study of water diffusion, in both radial and axial directions, into biodegradable monolithic depots using ion beam analysis

Smith

Booth

Massingham

et al. 2004

Polymer

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Section: Ion Beam Analysismentioning

confidence: 99%

A study of water diffusion, in both radial and axial directions, into biodegradable monolithic depots using ion beam analysis

Smith

Booth

Massingham

et al. 2004

Polymer

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“…Monitoring a probe's position on a semiconductor sample with an oxide coating is facilitated by the beam induced oxide fluorescence [2,8]. A bonus with the TDI structures was the fluorescence of the buried oxide, which could be seen through the silicon overlays.…”

Section: Dlscusslons and Concluslonsmentioning

confidence: 99%

“…The SSM and its use for ion-channelling has been described in previous publications [3,8,9]. It is capable of producing a 10 pm diameter probe of 1.5 MeV "He' ions for ion-channelling.…”

Section: Introductionmentioning

confidence: 99%

Nuclear microprobe ion-channelling analysis of total dielectric isolation structures in silicon

Thornton

Robinson

Reeson

et al. 1991

Semicond. Sci. Technol.

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The production of isolated device islands by high dose oxygen implantation into silicon followed by high temperature annealing has been termed total dielectric isolation (TDI). Higher packing densities, higher frequency performance and radiation hardness are the three potential advantages of fabricating very large scale integrated circuits by this method. Because of the microscopic size of the silicon islands. they cannot be analysed using conventional ion-channelling apparatus. However, some nuclear microprobes are now available which produce small diameter, low convergence MeV ion beams suitable lor microscopic ion-channelling analysis. Thus, a technique which h a s proved very useful in analysing the near surface region in bulk semiconductor samples can now b e applied to semiconductor device structures. W e report on a preliminary study of TDI structures using the Surrey scanning microprobe. Measurements of crystalline quality, silicon thickness and buried oxide thickness were obtained from isolated islands. Secondary electron and optical microscopy were used to assess beam damage, and the feasibility of nuclear microprobe analysis of TDI structures is discussed.

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