Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O2

Xing, Yifan; Chen, Yu-Rui; Wang, Jer-Fu; Zhao, Zefu; Chen, Yun-Wen; Chen, Guan-Hua; Lin, Yuxuan; Dobhal, Rachit; C, Liu

doi:10.1109/jeds.2022.3218004

Cited by 9 publications

(3 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Comparison between this work and several previously reported cryogenic HfO 2 -based ferroelectric devices (refs [16][17][18]20,21,43]…”

supporting

confidence: 52%

Ferroelectric Hf_0.5Zr_0.5O₂for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

Bohuslavskyi,

Grigoras,

Ribeiro

et al. 2024

Adv Elect Materials

View full text Add to dashboard Cite

Low‐power nonvolatile memories operating down to deep cryogenic temperatures are important for a large spectrum of applications from high‐performance computing, electronics interfacing quantum computing hardware to space‐based electronics. Despite the potential of Hf0.5Zr0.5O2 (HZO), thanks to its compatibility with complementary metal‐oxide‐semiconductor (CMOS) back‐end‐of‐line processing, only few studies of HZO‐based memory devices down to cryogenic operation temperatures exist. Here, analog ferroelectric memory stack fabrication with 10 nm HZO and their detailed characterization under wide range of pulse amplitudes and frequencies down to 4 K are reported. When operated at temperatures below 100 K, HZO devices can support high amplitude voltage pulses, yielding record high Pr of up to 75µC cm−2 at ±7 Vp (14 Vpp) pulse amplitudes accompanied with frequency‐dependent memory window between 6 and 8 V. Devices show excellent endurance exceeding 109 cycles of ±5 Vp (10 Vpp) and Pr of 30 µC cm−2 without significant degradation of coercive voltages or loss of polarization at cryogenic temperatures. At least 20 reproducible analog states for temperatures below 100 K with almost ideal linearity of intermediate polarization states in both pulse directions is observed, demonstrating the high potential of analog cryogenic ferroelectric memories, essential for on‐line training in in‐memory‐computing architecture.

show abstract

“…Comparison between this work and several previously reported cryogenic HfO 2 -based ferroelectric devices (refs [16][17][18]20,21,43]…”

supporting

confidence: 52%

Ferroelectric Hf_0.5Zr_0.5O₂for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

Bohuslavskyi,

Grigoras,

Ribeiro

et al. 2024

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…eV/nm 3 for m-phase, 9.31eV/nm 3 -9.09 eV/nm 3 for o-phase, and 8.46eV/nm 3 -8.30 eV/nm 3 for t-phase [28,29]. Referring the free energy of m-phase, the relative free energy of t-phase decreases drastically at increasing temperature, while the relative free energy of o-phase is almost independent of temperature (Figure .…”

Section: Methodsmentioning

confidence: 89%

A Kinetic Pathway to Orthorhombic HfZrO

Chen,

Zhao

et al. 2023

IEEE J. Electron Devices Soc.

Self Cite

View full text Add to dashboard Cite

To improve the crystallinity and phase composition of the Hf0.5Zr0.5O2 films, the effects of annealing temperature on metal-ferroelectric-metal devices are studied by electrical measurements, nanobeam electron diffraction (NBD), and TEM. Forming gas annealing (FGA) at 400 o C partially crystallizes the films, and more crystallization can be achieved by FGA at the increasing temperature of 500 o C and 800 o C. After FGA at 400 o C and 500 o C, metastable ferroelectric orthorhombic phase can be obtained as shown by electrical measurements and NBD. By the density functional theory (DFT) simulation, we propose that o-phase formation happens during both the annealing step as well as the cooling step. During the FGA at 800 o C, the metastable orthorhombic phase overcomes the activation barrier and transforms into stable monoclinic phase. In this work, the systematic experimental study of phase transformation, free energy simulation for different phases, and schematic diagrams of free energy for phase transition at different temperatures are reported.

show abstract

“…Future experiments will focus on these improvements. [ [16][17][18]20,21,43]) in terms of key performance matrices at room temperature and at low temperature.…”

Section: Imprint Fatigue and Endurancementioning

confidence: 99%

Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In-Memory Computing Applications down to Deep Cryogenic Temperatures

Bohuslavskyi,

Grigoras,

Ribeiro

et al. 2024

Preprint

View full text Add to dashboard Cite

Low-power non-volatile memories operating down to deep cryogenic temperatures are important for a large spectrum of applications from high-performance computing and electronics interfacing quantum computing hardware to space-based electronics. Despite the potential of HfZrO (HZO), thanks to its compatibility with complementary metal-oxide-semiconductor (CMOS) back-end-of line processing, only a few studies of HZO based memory devices down to cryogenic operation temperatures exist. Here, we report on analog ferroelectric memory stack fabrication with 10 nm HZO and its detailed characterization under a wide range of pulse amplitudes and frequencies from 300 K down to 4 K. When operated at temperatures below 100 K, HZO devices can support high amplitude voltage pulses, yielding record high remnant polarization P of up to 75µC cm at ±7 Vp (14 V) pulse amplitudes accompanied with frequency-dependent memory window between 6 and 8 V. Devices show excellent endurance exceeding 10 cycles of ±5 V (10 V) and P of 30 µC cm without significant degradation of coercive voltages or loss of polarization at cryogenic temperatures. At least 20 reproducible analog states for temperatures below 100 K with almost ideal linearity of intermediate polarization states in both pulse directions are observed, demonstrating the high potential of analog cryogenic ferroelectric memories, essential for online training in In-Memory-Computing architecture.

show abstract

Improved Ferroelectricity in Cryogenic Phase Transition of Hf_0.5Zr_0.5O₂

Cited by 9 publications

References 38 publications

Ferroelectric Hf_0.5Zr_0.5O₂for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

Ferroelectric Hf_0.5Zr_0.5O₂for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

A Kinetic Pathway to Orthorhombic HfZrO

Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In-Memory Computing Applications down to Deep Cryogenic Temperatures

Contact Info

Product

Resources

About

Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O2

Cited by 9 publications

References 38 publications

Ferroelectric Hf0.5Zr0.5O2for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

Ferroelectric Hf0.5Zr0.5O2for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

A Kinetic Pathway to Orthorhombic HfZrO

Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In-Memory Computing Applications down to Deep Cryogenic Temperatures

Contact Info

Product

Resources

About

Improved Ferroelectricity in Cryogenic Phase Transition of Hf_0.5Zr_0.5O₂

Ferroelectric Hf_0.5Zr_0.5O₂for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures

Ferroelectric Hf_0.5Zr_0.5O₂for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures