The inverted organic light-emitting diodes (IOLEDs) have been fabricated using the hybrid-p-doped hole transport layer consisting of MoO 3 -doped N,N 0 -bis-(1-naphthl)-diphenyl-1,1 0 -biphenyl-4,4 0 -diamine (NPB:MoO 3 ) and 2,3,5,6-Tetrafluoro-7,7,8,8,-tetracyano-quinodimethanedoped NPB (NPB:F 4 -TCNQ). Compared with the IOLED using the 20 nm NPB:MoO 3 /Al, the one using the 10 nm NPB:F 4 -TCNQ/10 nm NPB:MoO 3 /Al showed increased performance, attributed to the higher conductivity of NPB:F 4 -TCNQ than NPB:MoO 3 , reducing the ohmic loss in hole conduction through the combined 10 nm NPB:F4-TCNQ and 10 nm NPB:MoO 3 than through the 20 nm NPB:MoO 3 ; it also presented improved performance than the IOLED using the 20 nm NPB:F 4 -TCNQ/Al, ascribed to the non-ohmic contact formation between NPB:F 4 -TCNQ and Al, resulting from that the p-doping effect of F 4 -TCNQ in NPB was significantly suppressed by the Al deposition in the interfacial zone. The hybrid p-doping of hole transport layer can offer a large space to promote the performance of IOLEDs.