Improved ionic conductivity in strained yttria-stabilized zirconia thin films

Jiang, Jun; Hu, Xiaocao; Shen, Weida; Ni, Chaoying; Hertz, Joshua L.

doi:10.1063/1.4801649

Cited by 70 publications

(58 citation statements)

References 26 publications

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“…Figure 4 shows the measured oxygen ionic conductivity versus temperature for VAN films including YSZ and SDC, compared to YSZ films, doped CeO 2 films, and their multilayer films. 11,13,33,[77][78][79][80][81][82] Enhanced ionic conductivity values by one order of magnitude or more are observed. 49,50 Enhancement of ionic conductivity values has also been observed in VAN films of YSZ and Gd-doped CeO 2 .…”

Section: A Resistive Switching Phenomenamentioning

confidence: 94%

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Lee

MacManus‐Driscoll

2017

APL Materials

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This review provides the design principles to develop new nanoionic applications using vertically aligned nanostructured (VAN) thin films, incorporating two phases which self-assemble in one film. Tunable nanoionics has attracted great attention for energy and device applications, such as ion batteries, solid oxide fuel cells, catalysts, memories, and neuromorphic devices. Among many proposed device architectures, VAN films have strong potential for nanoionic applications since they show enhanced ionic conductivity and tunability. Here, we will review the recent progress on state-of-the-art nanoionic applications, which have been realized by using VAN films. In many VAN systems made by the inclusion of an oxygen ionic insulator, it is found that ions flow through the vertical heterointerfaces. The observation is consistent with structural incompatibility at the vertical heteroepitaxial interfaces resulting in oxygen deficiency in one of the phases and hence to oxygen ion conducting pathways. In other VAN systems where one of the phases is an ionic conductor, ions flow much faster within the ionic conducting phase than within the corresponding plain film. The improved ionic conduction coincides with much improved crystallinity in the ionically conducting nanocolumnar phase, induced by use of the VAN structure. Furthermore, for both cases Joule heating effects induced by localized ionic current flow also play a role for enhanced ionic conductivity. Nanocolumn stoichiometry and strain are other important parameters for tuning ionic conductivity in VAN films. Finally, double-layered VAN film architectures are discussed from the perspective of stabilizing VAN structures which would be less stable and hence less perfect when grown on standard substrates.

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Section: A Resistive Switching Phenomenamentioning

confidence: 94%

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Lee

MacManus‐Driscoll

2017

APL Materials

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“…In this work, GDC films with thicknesses down to 15 nm were prepared on (0001) Al 2 O 3 and characterized with impedance spectroscopy to measure the function of nanoscale thickness on the conductivity. Prior work examining YSZ films deposited and measured using highly similar methods found that sub-100 nm thick films had lattices that were significantly dilated in the out-of-plane direction and supported significantly increased conductivity [15].…”

Section: Introductionmentioning

confidence: 99%

Structure and ionic conductivity of nanoscale gadolinia-doped ceria thin films

2013

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“…The Arrhenius plot for σ t , (b), is not linear, consistent with that reported for various YSZ samples on many other occasions. 3,7,8,10,28,29 This non-linearity is widely attributed to trapping of oxygen vacancies in vacancy-dopant complexes at low temperatures: 30 at higher temperatures, dissociation of the complexes occurs and the trapping enthalpy is not included in the activation energy. The total conductivity, σ t , at high temperatures, would therefore represent the hopping of free vacancies.…”

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confidence: 99%

“…Many data sets, especially for compositions that exhibit high oxide ion conductivity, show distinct curvature of the Arrhenius plots which is attributed to the trapping at lower temperatures of mobile oxide ion vacancies in vacancydopant defect complexes. 3,[7][8][9][10] Two possible defect complexes that are widely discussed are the charged dimer, (Y Zr V…”

mentioning

confidence: 99%

Electrical Properties of Yttria-Stabilized Zirconia, YSZ Single Crystal: Local AC and Long Range DC Conduction

Vendrell

West

2018

J. Electrochem. Soc.

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Widely-used complex plane analysis of impedance data is insufficiently sensitive to characterize fully the bulk properties of YSZ single crystal. Instead, more extensive data analysis is needed which uses a combination of parallel, admittance-based formalisms and series, impedance-based formalisms. Bulk electrical properties are measured at higher frequencies and contain contributions from both long range conduction and local dielectric relaxation. At lower frequencies, electrode-sample contact impedances are measured and are included in full equivalent circuit analysis. The impedance of YSZ crystal of composition 8 mol% Y 2 O 3 in the (110) orientation, with Pt electrodes, was measured over the temperature range 150-750 • C and frequency range 0.01 Hz-3 MHz. Full data analysis required (i) a parallel constant phase element (CPE)-resistance (R) combination to model the electrode response, (ii) a series R-C element to represent local reorientation of defect dipoles and (iii) a R-C-CPE element to represent long range oxide-ion conduction; (ii) and (iii) together model the bulk response. The dielectric element underpins all discussions about defect structure and properties of YSZ but has not been included previously in analysis of impedance data. The new equivalent circuit that is proposed should allow better separation of bulk and grain boundary impedances of YSZ ceramics. Yttria-stabilized zirconia (YSZ) is a very well-known oxide ion conductor that is used as the solid electrolyte in solid oxide fuel cells and oxygen gas sensors.1-3 It usually takes the form of a high-density ceramic in which the bulk resistance in series with a grain boundary resistance gives the overall sample resistance. 4 In almost all cases, the grain boundary resistance is present and cannot be eliminated readily by attention to ceramic processing conditions. The nature of the grain boundary impedance is often unclear, although significant compositional differences from the bulk, associated with dopant segregation, may be involved. 5,6 In order to measure sample impedances, sample-electrode contacts are necessary and therefore, appropriate consideration of their associated impedances forms part of the overall impedance analysis. For YSZ, contact impedances include contributions from the blocking of oxide ions at the sample-electrode interface, charge transfer resistances associated with the O 2− /O 2 redox couple and the diffusion of O 2 molecules between the surrounding atmosphere and the sampleelectrode interface. Usually, electrode contact impedances are wellseparated on a frequency scale from bulk/grain boundary impedances because they have much higher associated capacitances, C: typically (1-10) × 10 −6 F for the electrode contact compared with ∼ 1 × 10 −10 F for a grain boundary capacitance and (2-3) × 10 −12 F for a bulk capacitance. Relaxation frequencies, ω, are given ideally by ωτ = 1, where τ = RC and therefore, the frequency maxima of impedance semicircles, arcs or peaks associated with bulk/grain boundary impedances are usuall...

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Improved ionic conductivity in strained yttria-stabilized zirconia thin films

Cited by 70 publications

References 26 publications

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Research Update: Fast and tunable nanoionics in vertically aligned nanostructured films

Structure and ionic conductivity of nanoscale gadolinia-doped ceria thin films

Electrical Properties of Yttria-Stabilized Zirconia, YSZ Single Crystal: Local AC and Long Range DC Conduction

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