Improved leakage property and reduced crystallization temperature by V2O5 seed layer in K0.4Na0.6NbO3 thin films derived from chemical solution deposition

Li, N.; Li, W.L.; Wang, L.D.; Xu, Dan; Chi, Qingguo; Fei, W.D.

doi:10.1016/j.jallcom.2012.10.072

Cited by 22 publications

(10 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In this regard potassium sodium niobate is considered to be among the most promising materials to replace Pb(Zr,Ti)O 3 , [16,17] which currently dominates the market. The use of Pb(Zr,Ti)O 3 has, however, been restricted in its implementation in electronic devices by the European Union because it contains hazardous lead.…”

mentioning

confidence: 99%

Ferroelectric monoclinic phases in strained K_0.70Na_0.30NbO₃ thin films promoting selective surface acoustic wave propagation

et al. 2018

View full text Add to dashboard Cite

We present a detailed analysis of the ferroelectric domain structure of KNaNbO thin films on (110) TbScO grown by metal-organic chemical vapor deposition. Upon piezoresponse force microscopy and nanofocus x-ray diffraction measurements we derive a domain model revealing monoclinic M domains. The complex domain pattern is formed out of four co-existing in-plane orientations of the shearing direction of the monoclinic unit cell resulting in four types of superdomains each being composed of well-ordered stripe domains. Finally, we present surface acoustic wave (SAW) experiments that exhibit extraordinary signal intensities given the low thickness of the tested film. Moreover, the SAW propagation is found to occur selectively along the identified shearing directions.

show abstract

mentioning

confidence: 99%

Ferroelectric monoclinic phases in strained K_0.70Na_0.30NbO₃ thin films promoting selective surface acoustic wave propagation

et al. 2018

View full text Add to dashboard Cite

show abstract

“…1). [59] It has been shown that if the crystal structure of the seeding layer is close to that of the ferroelectric oxide, the resulting film grows with a strong preferred orientation. [85] On the contrary, if this seed layer has a non-ferroelectric composition, a decrease of the ferroelectric response (lower P R values and higher coercive fields, E C , than fully crystallized films) should be expected, since it would work like a bottom in-series interface in a planar configuration of capacitors fabricated with the ferroelectric film.…”

Section: Iii6 Seeding Layersmentioning

confidence: 99%

“…1). [11,12,14,39,40,44,46, Fukushima et al, [74] and Budd et al, [75,76] were among the first that demonstrated the successful fabrication of ferroelectric oxide thin films (PbTiO 3 , Pb(Zr,Ti)O 3 , PZT and 2014 [39] 2010 [46] 2019 [40] 2017 [44] 2017 [73] 2015 [72] 2014 [11] 2020 [71] 2011 [63][64][65] 2014 [62] 2008 [68] 2010 [67] 1999 [61] 2020 [70] 2003 [69] 2004 [12] 2000 [66] 2014 [62] 2016 [58] 2008 [57] 2017 [56] 2008 [14] 2001 [60] 2013 [59] 2018 [52] 2003 [53] 2000 [54] 2009 [55] The graphic shows the ferroelectric composition of the film, the processing temperature at which they were processed and the ferroelectric remanent polarization (PR) measured in them. The CSD strategy/ies used for the low-temperature solution processing of the films are also shown.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

Bretos

Jiménez

Ricote

et al. 2020

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

View full text Add to dashboard Cite

This Technical Review presents the state-of-the-art in low-temperature chemical solution deposition (CSD) processing of ferroelectric oxide thin films. To achieve the integration of multifunctional crystalline oxides with flexible and semiconductor devices is today crucial to meet the demands of coming electronic devices. Hence, amorphous metal oxide semiconductors have been recently introduced in thin film electronics. However, their benefits are limited compared to those of ferroelectric oxides, which intrinsic multifunctionality would make possible multiple operations in the device. But, ferroelectricity is linked to a non centrosymmetric crystal structure that is achieved, in general, at high temperatures, over 500C. These temperatures exceed the thermal stability of flexible polymer substrates and are not compatible with those permitted in the current fabrication routines of Si-based devices. In addition, the manufacturing of flexible electronic devices not only calls for low-temperature fabrication processes but also for deposition techniques that scale easily to the large areas required in flexible devices. In this regard, CSD processes are the best positioned today to integrate metal oxide thin-films with flexible substrates, as a large-area, low-cost, high-throughput fabrication technique. Here, we review the progress made in the last years in fabricating at low temperature crystalline ferroelectric oxide thin films via CSD methods, highlighting the recent work of our group in the preparation of ferroelectric oxide thin films on flexible polyimide substrates.

show abstract

“…Limited thickness of KNN‐based films and relatively high sintering temperature make the volatilization of alkali elements inevitable . Additionally, KNN‐based films also suffered from deviation from the composition stoichiometry and high leakage current . Nevertheless, high‐quality KNN‐based films with comparable performances were fabricated after years of research by improving the works of predecessors.…”

Section: Introductionmentioning

confidence: 99%

Potassium‐Sodium‐Niobate‐Based Thin Films: Lead Free for Micro‐Piezoelectrics

et al. 2019

View full text Add to dashboard Cite

Extensive research and great progress of (K,Na)NbO 3 (KNN)-based lead-free piezoelectric films have been driven by the current legislation and the requirement for sustainable development of society and environment in the applications of microelectromechanical systems. A comprehensive discussion of the recent achievement in KNN-based films is presented herein. First, the available synthetic techniques, chemical modification, the ferroelectric and piezoelectric properties of KNN-based films are reviewed, followed by an introduction of the crystal structures and electrical properties of KNN-based epitaxial films in comparison with the bulk ceramics. Finally, the applications of KNN-based films for the sensors, the energy harvesters, and energy storage devices are addressed, and current challenges and prospects for future work are discussed.

show abstract

Improved leakage property and reduced crystallization temperature by V2O5 seed layer in K0.4Na0.6NbO3 thin films derived from chemical solution deposition

Cited by 22 publications

References 28 publications

Ferroelectric monoclinic phases in strained K_0.70Na_0.30NbO₃ thin films promoting selective surface acoustic wave propagation

Ferroelectric monoclinic phases in strained K_0.70Na_0.30NbO₃ thin films promoting selective surface acoustic wave propagation

Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

Potassium‐Sodium‐Niobate‐Based Thin Films: Lead Free for Micro‐Piezoelectrics

Contact Info

Product

Resources

About

Improved leakage property and reduced crystallization temperature by V2O5 seed layer in K0.4Na0.6NbO3 thin films derived from chemical solution deposition

Cited by 22 publications

References 28 publications

Ferroelectric monoclinic phases in strained K0.70Na0.30NbO3 thin films promoting selective surface acoustic wave propagation

Ferroelectric monoclinic phases in strained K0.70Na0.30NbO3 thin films promoting selective surface acoustic wave propagation

Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

Potassium‐Sodium‐Niobate‐Based Thin Films: Lead Free for Micro‐Piezoelectrics

Contact Info

Product

Resources

About

Ferroelectric monoclinic phases in strained K_0.70Na_0.30NbO₃ thin films promoting selective surface acoustic wave propagation

Ferroelectric monoclinic phases in strained K_0.70Na_0.30NbO₃ thin films promoting selective surface acoustic wave propagation