Improved negative bias stability of sol–gel processed Ti-doped SnO<sub>2</sub> thin-film transistors

Lee, Won Young; Lee, Hyunjae; Ha, Seunghyun; Lee, Changmin; Bae, Jin‐Hyuk; Kang, In Man; Jang, Jaewon

doi:10.1088/1361-6641/abb9fe

Cited by 9 publications

(16 citation statements)

References 32 publications

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“…[18,19,30]. In addition, compared with sol-gel-processed Mg-and Ti-doped based SnO 2 , Li-doped SnO 2 based TFTs show more stable NBS properties [19,30]. Comparing to the previous results, Li-doped SnO 2 TFTs show similar or higher field effect mobility and comparable negative bias stability.…”

Section: Resultsmentioning

confidence: 70%

“…However, if Li is located at a substitutional site in the SnO2 matrix, it can neutralize the electrons, which are the system's main carriers; because of fewer electrons, FEM decreases. [18,19,30]. In addition, compared with sol-gel-processed Mg-and Ti-doped based SnO 2 , Li-doped SnO 2 based TFTs show more stable NBS properties [19,30].…”

Section: Resultsmentioning

confidence: 99%

“…However, sol-gel-processed Li doping can be applied to other types of the solution-processed oxide TFTs. [18,19,30]. In addition, compared with sol-gel-processed Mg-and Ti-doped based SnO2, Li-doped SnO2 based TFTs show more stable NBS properties [19,30].…”

Section: Resultsmentioning

confidence: 99%

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Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Kim

Lee

et al. 2021

Electronics

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In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

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Section: Resultsmentioning

confidence: 70%

Section: Resultsmentioning

confidence: 99%

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Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Kim

Lee

et al. 2021

Electronics

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“…The detected diffraction peaks of all films were well matched to tetragonal SnO 2 (26.6, 33.8, 37. 019 nm) has a larger ionic radius than Sn 4+ (0.69 nm), thus weakening the film's crystallinity. 27 Figure 3a shows the O 1s core-level X-ray photoelectron spectroscopy (XPS) spectra of the general SnO 2 TFT, and Figure 3b…”

Section: Introductionmentioning

confidence: 99%

Environmentally and Electrically Stable Sol–Gel-Deposited SnO₂ Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

Lee

Kim

et al. 2022

ACS Appl. Mater. Interfaces

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This study examines the effect of the annealing time of the Y 2 O 3 passivation layer on the electrical performances and bias stabilities of sol−geldeposited SnO 2 thin-film transistors (TFTs). The environmental stabilities of SnO 2 TFTs were examined. After optimizing the Y 2 O 3 passivation layers in SnO 2 TFTs, the field-effect mobility was 7.59 cm 2 /V•s, the V TH was 9.16 V, the subthreshold swing (SS) was 0.88 V/decade, and the on/off-current ratio was approximately 1 × 10 8 . V TH shifts were only −0.18 and +0.06 V under negative and positive bias stresses, respectively. The SnO 2 channel layer thickness and oxygenvacancy concentration in SnO 2 , which determine the carrier concentration, were successfully tuned by controlling the annealing time of the Y 2 O 3 passivation layers. An extremely thin Y 2 O 3 passivation layer effectively blocked external molecules, thus affecting the device performance. The electrical performance was maximized in SnO 2 TFTs using a 15 min-annealed Y 2 O 3 passivation layer. In this TFT, the field-effect mobility was maximally retained and the bias and environmental stabilities were sustained over 90 days of air exposure.

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“…So far, several doping elements have demonstrated to suppress carrier concentration and improve the electrical properties of SnO 2 -based TFTs, such as Ti, Ga, Hf, Al, Y, Zr, and Bi. [12][13][14][15][16][17] Although they could exhibit relatively good device performance, these SnO 2based TFTs still cannot meet the requirement of practical application. In this work, the Si element was selected to suppress carrier concentration of SnO 2 film on the basis of electronegativity (Si: 1.8 > Sn: 1.7), atomic radius (Si: 0.1284 nm < Sn: 0.1578 nm), Lewis acid strength (Si 4+ : 8.096 > Sn 4+ : 1.617) and metal-oxygen bonding strength (Si-O: 799.6 kJ mol −1 > Sn-O: 531.8 kJ mol −1 ).…”

Section: Introductionmentioning

confidence: 99%

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

Liu

Zhang

Shiah

et al. 2021

Adv Materials Inter

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Recently, amorphous oxide semiconductors (AOSs) have attracted much attention owing to their various advantages. The intrinsic nature of AOSs enables to achieve high‐performance thin‐film transistors (TFTs) using low‐temperature process, which would be a strong point for next‐generation flexible electronics. However, most AOS TFTs still require postannealing treatments (>300 °C) for structural relaxation to suppress defects, which lead to the issue of thermal resistance of plastic substrates. Therefore, a strategy for obtaining both low‐temperature process and defect suppression is highly demanded for flexible electronics. To solve the former issue, a Sn–Si–O system is proposed in this paper. It is clarified that Si cations play the roles of amorphousizing SnO2 and suppressing carrier concentration. As a result, room‐temperature fabricable flexible Sn–Si–O TFTs with high mobility and high reliability are demonstrated. It is also suggested that obtaining a rigid film structure is quite important to fabricate high performance TFTs without any further postannealing treatment. The obtained saturation mobility (μsat) and on/off ratio are 7.59 cm2 V−1 s−1 and 1.59 × 107, respectively. This work suggests that amorphous Si doped SnO2 has the potential for the application to the flexible driving backplane in display industry.

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Improved negative bias stability of sol–gel processed Ti-doped SnO₂ thin-film transistors

Cited by 9 publications

References 32 publications

Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Environmentally and Electrically Stable Sol–Gel-Deposited SnO₂ Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

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Improved negative bias stability of sol–gel processed Ti-doped SnO2 thin-film transistors

Cited by 9 publications

References 32 publications

Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Environmentally and Electrically Stable Sol–Gel-Deposited SnO2 Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

Contact Info

Product

Resources

About

Improved negative bias stability of sol–gel processed Ti-doped SnO₂ thin-film transistors

Environmentally and Electrically Stable Sol–Gel-Deposited SnO₂ Thin-Film Transistors with Controlled Passivation Layer Diffusion Penetration Depth That Minimizes Mobility Degradation