Improved Ohmic Contact Model for Accurate Simulation of GaN-based HEMTs Using Ensemble Monte Carlo Methods

Sakota, K.; Herbert, K.; Shibata, Kazuki; Kuzuhara, Masaaki; Asubar, Joel T.

doi:10.1109/imfedk56875.2022.9975422

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) 2022

DOI: 10.1109/imfedk56875.2022.9975422

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Improved Ohmic Contact Model for Accurate Simulation of GaN-based HEMTs Using Ensemble Monte Carlo Methods

K. Sakota

K. Herbert

Kazuki Shibata

et al.

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Improved Ohmic Contact Model for Accurate Simulation of GaN-based HEMTs Using Ensemble Monte Carlo Methods

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