The aqueous lithium-air battery receives much attention because of its high theoretical energy density; however, it is necessary to clarify the reaction and mass transport of the electrolytic solution in efforts to obtain much higher current density. In this study, numerical simulation employing the lattice Boltzmann method realized coupled simulation of transport phenomena of Li + and O 2 in the discharge process. The numerical results suggest the importance of supplying the electrolyte with sufficient O 2 to achieve discharge with high current density. The results of simulation indicate that a high-pressure O 2 supply and increased area of the air/electrolyte interface are effective solutions to realizing discharge with high current density.

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Using numerical integration of the Boltzmann transport equation, depth distributions of recoil-implanted Ga and N atoms in Mg-implanted GaN are studied. Mg implantation into GaN is found to produce significant nonuniform stoichiometric distribution as a consequence of the recoil process, as compared to other III–V materials of GaP, GaAs and GaSb. Our calculation also indicates that the stoichiometric imbalance introduced by Mg implantation in GaN is insensitive to the changes in the implanted ion energy and the atom density of the target material. These results suggest that stoichiometric imbalance may be one of the principal reasons why the electrical activation of implanted Mg acceptors in GaN is rather difficult as compared to that in other III–V semiconductors.

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