Improved Optical Performance of InAs Quantum Dot Structure via Suitable Manipulation of GaAs Cap Layer Growth

Qi, Zhiqiang; Li, Senlin; Sun, Shikun; Zhang, Wei; Ye, Wei; Fang, Yanyan; Dai, Jiangnan; Chen, Chang

doi:10.1007/s11664-015-4169-7

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2018

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“…Although many QD lasers grown by MBE or MOCVD have been demonstrated [6][7][8][9][10][11][12], it is still a challenge to grow QDs by MOCVD with a luminescence wavelength near or beyond 1.3 µm due to the formation of incoherent islands in the epitaxial process. However, as MOCVD growth is much more suitable for industrial application than MBE, researchers have been focusing on QDs with high optical quality grown by MOCVD and corresponding QD lasers which are operating under continuous wave (CW) mode at room temperature [12,13].…”

Section: Introductionmentioning

confidence: 99%

1.16 μm InAs/GaAs Quantum Dot Laser grown by Metal Organic Chemical Vapor Deposition

Líu

Wang

et al. 2018

Acta Phys. Pol. A

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In this study, a 1.16 µm InAs/GaAs quantum dot laser operating at continuous wave condition grown by metal organic chemical vapor deposition was demonstrated. For the quantum dot laser diode with 2 mm cavity length and 10 µm stripe width bonded on a heat sink, continuous wave lasing can still be observed up to 55 • C. At room temperature, threshold current density was as low as 950 A/cm 2 and the output power reached 25.4 mW under 300 mA injection current (1.58I th). In addition, the external differential efficiency of 43.1%, the internal quantum efficiency of 59.6% and the internal loss of 2.2 cm −1 have been obtained, respectively.

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