Improved performance of 1.3  m InGaAsP–InP lasers with an AlInAs electron stopper layer

Abstract

We have fabricated 1.3 µm InGaAsP-InP strained-layer multi-quantum-well (MQW) lasers with an AlInAs electron stopper layer (ESL). The ESL was inserted between the MQW active layer and the p-side separate confinement heterostructure (SCH) layer to suppress electron leakage in the conduction band from the active region to the p-cladding layer. Lasers with an ESL exhibited much improved temperature characteristics of threshold current and external slope efficiency. As a result, a lower power penalty of 2.2 dB from 25 • C to 85 • C was achieved at an injected current of 60 mA. The insertion of an AlInAs ESL into the SCH layer is a successful way to realize the uncooled operation of 1.3 µm InGaAsP-InP lasers at high temperatures.

1.47 μm high characteristic temperature InGaAsP/InP MQW laser

“…This is because with temperature increases, the non-radiation recombination current increased, but the characteristic radiation recombination current decreases, and the characteristic temperature of the transparent current density get lower, so the characteristic temperature of threshold current is reduced [10].…”

Realization of Expected Direction Angle of SGM Spiral Bevel Gears Based on Local Synthesis

“…The technique of Gleason needs much experience in regulating contact pattern while local synthesis does not. So researchers are quite interested in local synthesis and try to apply it to the manufacture parameter design of spiral bevel gears in various fields [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17].…”

Numerical Study on Optimization of Active Regions for 1.3 µm AlGaInAs and InGaAsN Material Systems

“…The InGaAsP/InP, AlGaInAs/InP, and InGaAsN/GaAs active layer structures used in this study are obtained from the devices fabricated by different researchers. [10][11][12] Figure 1 shows the peak material gain as a function of carrier density for the InGaAsP/InP, AlGaInAs/InP, and InGaAsN/GaAs active layer structures at room temperature. The parameters of these active layer materials modeled and used for comparison are shown in Table I.…”