Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN

Zahir, Norhilmi Mohd; Talik, Noor Azrina; Harun, Hazmi Naim; Kamarundzaman, Anas; Tunmee, Sarayut; Nakajima, Hideki; Chanlek, Narong; Shuhaimi, Ahmad; Majid, W.H. Abd.

doi:10.1016/j.apsusc.2020.148406

Cited by 10 publications

(2 citation statements)

References 66 publications

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“…With the increasing demand for micro-LEDs currently, the need for optimization research on indium tin oxide (ITO), considered to be a promising electrode for the p-type GaN layer among various current-spreading layers, has also increased [12][13][14][15]. ITO films with high transparency, low 2 resistivity, and the ability to form reliable ohmic contacts with p-GaN are highly suitable for use as extended electrodes in micro-LED applications [16].…”

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer

Chu,

Youn,

Kim

et al. 2024

Preprint

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Wafer-scale blue micro-light-emitting diode (micro-LED) arrays are fabricated with a pixel size of 12 μm, a pixel pitch of 15 μm, and a pixel density of 1692 pixels per inch, achieved by optimizing the properties of e-beam-deposited and sputter-deposited indium tin oxide (ITO). Although the sputter-deposited ITO (S-ITO) films exhibit a densely packed morphology and lower resistivity compared to those of the e-beam-deposited ITO (E-ITO) films, the forward voltage (VF) values of a micro-LED with the S-ITO films are higher than those with the E-ITO films. The VF values for a single pixel and for four pixels with E-ITO films are 2.82 V and 2.83 V, respectively, while the corresponding values for S-ITO films are 3.50 V and 3.52 V. This was attributed to ion bombardment damage and nitrogen vacancies in the p-GaN layer. Surprisingly, the VF variations of a single pixel and of four pixels with the optimized E-ITO spreading layer from five different regions are only 0.09 V and 0.10 V, respectively. This extremely uniform VF variation is suitable for realizing micro-LED displays to be used in AR and VR applications, circumventing the bottleneck in the development of long-lifespan and high-brightness organic LED devices for industrial mass production.

show abstract

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer

Chu,

Youn,

Kim

et al. 2024

Preprint

View full text Add to dashboard Cite

show abstract

“…With the increasing demand for micro-LEDs at present, the need for optimization research on indium tin oxide (ITO)-considered to be a promising electrode for the p-type GaN layer, among various current-spreading layers-has also increased [12][13][14][15]. ITO films with high transparency, low resistivity, and the ability to form reliable ohmic contacts with 2 of 12 p-GaN are highly suitable for use as extended electrodes in micro-LED applications [16].…”

Section: Introductionmentioning

confidence: 99%

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer

Chu,

Youn,

Kim

et al. 2024

Micromachines

View full text Add to dashboard Cite

Wafer-scale blue micro-light-emitting diode (micro-LED) arrays were fabricated with a pixel size of 12 μm, a pixel pitch of 15 μm, and a pixel density of 1692 pixels per inch, achieved by optimizing the properties of e-beam-deposited and sputter-deposited indium tin oxide (ITO). Although the sputter-deposited ITO (S-ITO) films exhibited a densely packed morphology and lower resistivity compared to the e-beam-deposited ITO (E-ITO) films, the forward voltage (VF) values of a micro-LED with the S-ITO films were higher than those with the E-ITO films. The VF values for a single pixel and for four pixels with E-ITO films were 2.82 V and 2.83 V, respectively, while the corresponding values for S-ITO films were 3.50 V and 3.52 V. This was attributed to ion bombardment damage and nitrogen vacancies in the p-GaN layer. Surprisingly, the VF variations of a single pixel and of four pixels with the optimized E-ITO spreading layer from five different regions were only 0.09 V and 0.10 V, respectively. This extremely uniform VF variation is suitable for creating micro-LED displays to be used in AR and VR applications, circumventing the bottleneck in the development of long-lifespan and high-brightness organic LED devices for industrial mass production.

show abstract

Molecular dynamics simulation of cubic InxGa(1-x)N layers growth by molecular beam epitaxy

Camas

Conde

Vidal

et al. 2021

Computational Materials Science

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Improved performance of InGaN/GaN LED by optimizing the properties of the bulk and interface of ITO on p-GaN

Cited by 10 publications

References 66 publications

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer

Molecular dynamics simulation of cubic InxGa(1-x)N layers growth by molecular beam epitaxy

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