Improved performance of organic light-emitting devices with plasma treated ITO surface and plasma polymerized methyl methacrylate buffer layer

Organic optical coatings

“…Methyl methacrylate (MMA) as precursor can be used to prepare plasma polymerized poly(methyl methacrylate) (pPMMA) thin fi lms (Kinzig and Smardzewski, 1981;Lim and Shin, 2007). These layers have been found to be useful, for example, as buffer layers in OLEDs.…”

The effect of Indium metal nanoparticles on the electronic properties of organic light emitting diodes (OLEDs)

“…Because of the lack of details in the literatures, it is declared that following points are not directly connected to our topic but the relation is found delicately. However, the performance of OLEDs is dependent not only on the efficiency of hole and electron injection, but also on the balance of carriers, exciton generation and their recombination [11,13,14]. Moliton et al have emphasized that first step for enhancing the performance of OLEDs is studying on minority carriers [15].…”

“…Reducing the barrier level to increase the carrier's injection in OLEDs is a well-known strategy to enhance the physical properties of OLEDs. For this purpose, various approaches have been reported in the literature such as improving energy diagram to optimize the layers match, increasing injection of carriers through thin buffer layer and doping ions into the interface [10][11][12][13][14]. Also, the dynamics of injected charge carriers for some organic materials under space charge limited current (SCLC) conditions was investigated [11][12].…”

Preparation and Characterization of Plasma Polymerized Methyl Methacrylate Thin Films as Gate Dielectric for Organic Thin Film Transistor

“…A vacuum gauge (973 gauge controller) was used to detect the vacuum. Furthermore, cold trap with liquid nitrogen was installed to protect the rotary pump from the attack of methyl methacrylate (MMA) monomer [13]. The ppMMA thin films were deposited under the following experimental conditions: 100, 150, and 200 W of plasma power; 0.1 torr of system pressure; bias voltage of 3 V; and deposition time of 10 min.…”