Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric

Barreto, Arthur R. J.; Candiotto, Graziâni; Avila, H.J.; Carvalho, Rodrigo Furtado de; Santos, Allisson Mário dos; Prosa, Mario; Benvenuti, Emilia; Moschetto, Salvatore; Toffanin, Stefano; Capaz, Rodrigo B.; Muccini, Michele; Cremona, M.

doi:10.1021/acsami.3c04509

Cited by 6 publications

(1 citation statement)

References 56 publications

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“…The high mobility and luminescence brightness values surpassed the recently reported high-performance OLETs. [11,12,[39][40][41][42][43] The high brightness of the Fe-OLET device with UVO-treated P(VDF-TrFE)/PMMA is attributed to the high current density contributed by the high mobility. The high mobility is mainly due to the improved dielectric/channel interface characteristic and the good quality of the channel layer film.…”

Section: Resultsmentioning

confidence: 99%

Nonvolatile Memory Organic Light‐Emitting Transistors

Xu,

Zhao,

Meng

et al. 2023

Advanced Materials

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In the field of active‐matrix organic light emitting display (AMOLED), large‐size and ultra‐high‐definition AMOLED applications have escalated the demand for the integration density of driver chips. However, as Moore's Law approaches the limit, the traditional technology of improving integration density that relies on scaling down device dimension is facing a huge challenge. Thus, developing a multifunctional and highly integrated device is a promising route for improving the integration density of pixel circuits. Here, a novel nonvolatile memory ferroelectric organic light‐emitting transistor (Fe‐OLET) device which integrates the switching capability, light‐emitting capability and nonvolatile memory function into a single device is reported. The nonvolatile memory function of Fe‐OLET is achieved through the remnant polarization property of ferroelectric polymer, enabling the device to maintain light emission at zero gate bias. The reliable nonvolatile memory operations are also demonstrated. The proof‐of‐concept device optimized through interfacial modification approach exhibits 20 times improved field‐effect mobility and 5 times increased luminance. The integration of nonvolatile memory, switching and light‐emitting capabilities within Fe‐OLET provides a promising internal‐storage‐driving paradigm, thus creating a new pathway for deploying storage capacitor‐free circuitry to improve the pixel aperture ratio and the integration density of circuits towards the on‐chip advanced display applications.This article is protected by copyright. All rights reserved

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Section: Resultsmentioning

confidence: 99%

Nonvolatile Memory Organic Light‐Emitting Transistors

Xu,

Zhao,

Meng

et al. 2023

Advanced Materials

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Interfacial Charge Transport Enhancement of Liquid‐Crystalline Polymer Transistors Enabled by Ionic Polyurethane Dielectric

Nketia‐Yawson,

Buer

et al. 2024

Macromol. Rapid Commun.

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In organic field‐effect transistors (OFETs) using disordered organic semiconductors, interface traps that hinder efficient charge transport, stability, and device performance are inevitable. Benchmark poly(9,9‐dioctylfuorene‐co‐bithiophene) (F8T2) liquid‐crystalline polymer semiconductor has been extensively investigated for organic electronic devices due to its promising combination of charge transport and light emission properties. In this study, we demonstrated high‐capacitance single‐layered ionic polyurethane (PU) dielectrics enable an enhanced charge transport in F8T2 OFETs. The ionic PU dielectrics were composed of a mild blending of PU ionogel and PU solution, thereby forming a solid‐state film with robust interfacial characteristics with semiconductor layer and gate electrode in OFETs and measuring high capacitance values above 10 μF cm−2 owing to the combined dipole polarization and electric double layer formation. The optimized fabricated ionic PU‐gated OFETs exhibited a low‐voltage operation at −3 V with a remarkable hole mobility of over 5 cm2 V–1 s–1 (average = 2.50 ± 1.18 cm2 V–1 s–1), which is the highest mobility achieved so far for liquid‐crystalline F8T2 OFETs. This device also provided excellent bias‐stable characteristics in ambient air, exhibiting a negligible threshold voltage shift (ΔVT) of −0.03 V in the transfer curves after extended bias stress, with a reduced trap density.This article is protected by copyright. All rights reserved

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UV/Ozone‐Induced Interface Engineering for High‐Performance Horizontal Organic Light‐Emitting Transistors Operating at Low Voltage

Li,

Wu,

Peng

et al. 2024

Small

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Multifunctional organic light‐emitting transistors (OLETs), which combine electric‐switching and light‐producing capabilities into a single device, are attracting increasing interest as promising candidates for new‐generation display technology. Despite advancements in the design of organic luminescent materials and the optimization of device geometry configurations, maintaining operating voltage low while enhancing optical performances remains a key challenge in horizontally structured OLETs. Here, a simple and effective interfacial engineering strategy is employed to improve the optical properties of horizontal OLETs operating at low voltage, by introducing ultraviolet ozone (UVO)‐induced surface modification on high‐k dielectrics. It takes the role to not only control the surface activation states of dielectric layers but also optimize the growth dynamics behavior of channel film benefitting from the strong interfacial interaction between chemically modified dielectric surface and channel seed molecules. The optimized horizontal‐channel OLET exhibits a significantly high brightness of 9,484 cd m−2, more than 25 times greater than that of untreated OLETs (347 cd m−2), along with a peak EQE of 9.64%, a low operating voltage of 15 V, and good dynamic gate stress stability, outperforming other reported horizontal‐channel high‐performance OLETs. This work demonstrates that dielectric/semiconductor interface engineering is essential for high‐performance transistor‐based optoelectronic devices including horizontal OLETs.

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Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric

Cited by 6 publications

References 56 publications

Nonvolatile Memory Organic Light‐Emitting Transistors

Nonvolatile Memory Organic Light‐Emitting Transistors

Interfacial Charge Transport Enhancement of Liquid‐Crystalline Polymer Transistors Enabled by Ionic Polyurethane Dielectric

UV/Ozone‐Induced Interface Engineering for High‐Performance Horizontal Organic Light‐Emitting Transistors Operating at Low Voltage

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