2015
DOI: 10.1039/c4tc01990c
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Improved performance of organic solar cells by incorporating silica-coated silver nanoparticles in the buffer layer

Abstract: An enhancement of 19.2% in PCE is obtained by incorporating silica-coated silver nanoparticles into the buffer layer of organic solar cells.

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Cited by 52 publications
(37 citation statements)
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“…Apparently, G max of the P(NDI2OD‐FT2)‐based device is 15% higher than that of the P(NDI2OD‐T2)‐based one (Table ), which can be attributed to the extended light absorption range of the PBDTT‐TT‐F:P(NDI2OD‐FT2) blend. From the estimated G max , the exciton dissociation probability, P ( E , T ), can be determined by J ph = q·G max ·P ( E , T ) ·L because only a portion of photogenerated excitons are dissociated into holes and electrons in polymer solar cells . When the normalized photocurrent density ( J ph / J sat ) was plotted against V eff to evaluate the P ( E , T ) of the device, as shown in the inset of Figure c, it clearly demonstrates that the PBDTT‐TT‐F:P(NDI2OD‐FT2) blend generates more free charge carriers than PBDTT‐TT‐F:P(NDI2OD‐T2) blend under bias, which verifies its superior exciton quenching efficiency and charge generation capability.…”
Section: Methodsmentioning
confidence: 92%
“…Apparently, G max of the P(NDI2OD‐FT2)‐based device is 15% higher than that of the P(NDI2OD‐T2)‐based one (Table ), which can be attributed to the extended light absorption range of the PBDTT‐TT‐F:P(NDI2OD‐FT2) blend. From the estimated G max , the exciton dissociation probability, P ( E , T ), can be determined by J ph = q·G max ·P ( E , T ) ·L because only a portion of photogenerated excitons are dissociated into holes and electrons in polymer solar cells . When the normalized photocurrent density ( J ph / J sat ) was plotted against V eff to evaluate the P ( E , T ) of the device, as shown in the inset of Figure c, it clearly demonstrates that the PBDTT‐TT‐F:P(NDI2OD‐FT2) blend generates more free charge carriers than PBDTT‐TT‐F:P(NDI2OD‐T2) blend under bias, which verifies its superior exciton quenching efficiency and charge generation capability.…”
Section: Methodsmentioning
confidence: 92%
“…Their effect on the device V oc is weaken with the change of their location. In contrast, when Au BPs and ZnO closely contact, the hot electrons may trigger the “dopant level” in ZnO layer, leading to improved interface and conductivity of the ZnO layer . It should be difficult for the hot electrons to tunnel through the silica layer.…”
Section: Characteristics Of Devices With Au Bps@sio2 and Au Nss@sio2mentioning
confidence: 99%
“…3(a) and 3(b)]. It is reasonable to infer that the surface modification by Au@SiO 2 NRs could introduce the so-called dopant levels 25,39 within the band gap of PEDOT:PSS, resulting in a decrease in the energy barrier at the PEDOT:PSS/BHJ interface, thereby improving hole extraction. The small increase in V oc has also been reported in some published works 51,55 which similarly introduced plasmonic NPs at the buffer/active interface, but little attention has been paid on it.…”
Section: Resultsmentioning
confidence: 99%