Improved photovoltaic performance of hybrid solar cells based on silicon nanowire and P3HT

Dkhil, Sadok Ben; Ebdelli, R.; Dachraoui, Walid; Faltakh, Hana; Bourguiga, R.; Davenas, J.

doi:10.1016/j.synthmet.2014.03.016

Cited by 23 publications

(12 citation statements)

References 21 publications

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“…This doping generates charge carriers such as a radical cation (polaron) and dication (bipolaron) along the polymer chain, which are electrostatically compensated by inserting anions from the electrolyte solution [2][3][4][5][6]. Due to its structural properties, the electrochemical processes involved in conductivity of P3ATs are very important to understand this system aimed at using it in organic solar cells [2,[7][8][9][10]. Some applications of P3ATs use a tin oxide doped with indium (ITO) as a substrate, making a clear and colorless conductive film on a glass [7,11,12].…”

Section: Introductionmentioning

confidence: 99%

Complementary study on the electrical and structural properties of poly(3-alkylthiophene) and its copolymers synthesized on ITO by electrochemical impedance and Raman spectroscopy

Bento

Maia

Cervantes

et al. 2014

J Mater Sci: Mater Electron

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Targeting the use of organic conjugated polymers in organic solar cells, this study looks at the electrochemical properties of poly(3-alkylthiophene) films: poly(3-methylthiophene), poly(3-hexylthiophene), poly(3-octylthiophene) and its copolymers electrochemically synthesized on a tin-doped indium oxide (ITO) substrate. Electrochemical impedance spectroscopy (EIS) was used to monitor the change in the electrochemical behavior of these films on the ITO and the charge transfer resistance (R CT ) values were determined in open circuit potential (OCP) and at different overpotentials. Together with the EIS, the ex situ and in situ Raman spectroscopy was used to characterize the influence of aromatic radical cation and dication species, present in the polymer matrix of homo and copolymers, in the management processes seen in the Nyquist and Bode-phase diagrams for different systems obtained on ITO. The EIS results in OCP showed an decrease in resistance demonstrating increased conductivity with the copolymerization, and through the Bode-phase diagram and the ex situ Raman spectra, these changes were related to the oscillation of the radical cation and dication along the polymer matrix. By studying Nyquist and Bodephase diagrams in the overpotentials, an increase in R CT values in higher potentials was seen that could be related to the bipolaronic process, which after the deconvolution of the in situ Raman spectra, was possible to relate these results to the stabilization of the dication species in the homo and copolymers matrix when subjected to high potential.

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Section: Introductionmentioning

confidence: 99%

Complementary study on the electrical and structural properties of poly(3-alkylthiophene) and its copolymers synthesized on ITO by electrochemical impedance and Raman spectroscopy

Bento

Maia

Cervantes

et al. 2014

J Mater Sci: Mater Electron

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“…Thus, we think that the presence of P3HT thin film as an intermediate layer will improve the quality of the diode based on SiNWs. The synthesis of an active layer formed by P3HT and silicon nanowires in a single hybrid composition has been used by some researchers with the aim of improving the photovoltaic cells [19,20]. To our knowledge, the deposition of these polymers on the surface of SiNWs, as we realized, has not been carried out.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode

Rahmani

Meftah

2020

J Mater Sci: Mater Electron

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The electrical properties of Ag/Poly(3-hexylthiophene)/Silicon nanowires heterostructure (Ag/P3HT/SiNWs) were investigated. Silicon nanowires (SiNWs) were obtained by metal-assisted chemical etching method in one-step process. P3HT polymer was deposited on SiNWs surfaces by electroless deposition method for different immersion durations (d im). The morphology of SiNWs before and after deposition of P3HT polymer has been examined by scanning electron microscope (SEM). The formation of nanowires as well as the presence of P3HT on their surfaces can be seen in SEM images. Current-voltage (I-V) measurements were carried out on Ag/P3HT/SiNWs by varying d im from 30 to 210 min. The electrical measurements on the different junctions at room temperature showed a rectifying effect. For 30 min, the ideality factor of the Schottky diode was reduced from 4 to 1,4. By using the Cheung method, the diode parameters of the different structures are determined and discussed. The different hetrostructures have been annealed at 100 °C, 200 and 300 °C. The characteristic parameters were calculated as a function of annealing temperature. The optimum temperature for these heterostructures characteristics is 100 °C. The interface states, the trapping levels and the thermal activation of the free carriers are the main factors involved in the conduction phenomenon through Ag/P3HT/SiNWs heterostructures.

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“…Then, they are mixed with the polymer to obtain a heterojonction formed by polymer and SiNWs [22][23][24]. In this work, P3HT poly (3-hexylthiophene) film was deposited directly on the n-type Silicon substrate (001) using spin-coating method.…”

Section: Introductionmentioning

confidence: 99%

Effect of etching time and illumination on optical properties of SiNWs elaborated by Metal Assisted Chemical Etching (MACE) for organic photovoltaic applications

Saidi

Hidouri

Fraj

et al. 2015

Superlattices and Microstructures

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Improved photovoltaic performance of hybrid solar cells based on silicon nanowire and P3HT

Cited by 23 publications

References 21 publications

Complementary study on the electrical and structural properties of poly(3-alkylthiophene) and its copolymers synthesized on ITO by electrochemical impedance and Raman spectroscopy

Complementary study on the electrical and structural properties of poly(3-alkylthiophene) and its copolymers synthesized on ITO by electrochemical impedance and Raman spectroscopy

Electrical characterisation of Ag/poly(3-hexylthiophene)/silicon nanowires Schottky diode

Effect of etching time and illumination on optical properties of SiNWs elaborated by Metal Assisted Chemical Etching (MACE) for organic photovoltaic applications

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