2021
DOI: 10.1021/acsami.1c03795
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Improved Properties of the Atomic Layer Deposited Ru Electrode for Dynamic Random-Access Memory Capacitor Using Discrete Feeding Method

Abstract: Ruthenium (Ru) thin films deposited via atomic layer deposition (ALD) with a normal sequence and discrete feeding method (DFM) and their performance as a bottom electrode of dynamic random-access memory (DRAM) capacitors were compared. The DFM-ALD was performed by dividing the Ru feeding and purge steps of the conventional ALD process into four steps (shorter feeding time + purge time). The surface morphology of the Ru films was improved significantly with the DFM-ALD, and the preferred orientation of the Ru f… Show more

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Cited by 11 publications
(8 citation statements)
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“…This value was comparable to that of the bulk Ru electrode from previous studies. 5,38 With a Ru interlayer thickness of over 6.5 nm, the deteriorated surface morphology of each layer might cause the electric field to concentrate on the protrusions and traps in the electrode and dielectric films, 39 resulting in deteriorated electrical properties. Furthermore, the data points in the J-EOT graph were largely dispersed due to the degraded uniformity of the capacitors.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…This value was comparable to that of the bulk Ru electrode from previous studies. 5,38 With a Ru interlayer thickness of over 6.5 nm, the deteriorated surface morphology of each layer might cause the electric field to concentrate on the protrusions and traps in the electrode and dielectric films, 39 resulting in deteriorated electrical properties. Furthermore, the data points in the J-EOT graph were largely dispersed due to the degraded uniformity of the capacitors.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Because of the exponential relationship between the film thickness and tunneling current, small fluctuations in the film thickness can cause large tunneling current variation, which can result in the degradation of the DTDV reliability 64,161–163 . Therefore, the film fabrication process has to be well controlled and methods such as the discrete feeding method can be helpful for depositing more uniform films 164,165 . Moreover, this gives M/F/IL/M or M/F/IL/S structures a competitive advantage as tunneling in the LRS in these structures occurs through the IL, which can use common amorphous materials that are highly controllable, while well‐established ferroelectric thicknesses in the 5–10 nm range can be applied.…”
Section: Neuromorphic Computing Systems Based On Fluorite‐structured ...mentioning
confidence: 99%
“…64,[161][162][163] Therefore, the film fabrication process has to be well controlled and methods such as the discrete feeding method can be helpful for depositing more uniform films. 164,165 Moreover, this gives M/F/IL/M or M/F/IL/S structures a competitive advantage as tunneling in the LRS in these structures occurs through the IL, which can use common amorphous materials that are highly controllable, while well-established ferroelectric thicknesses in the 5-10 nm range can be applied.…”
Section: Two-terminal Devicesmentioning
confidence: 99%
“…More adsorption is achieved with the same feeding time, thus inducing an increase in the growth rate. 9,12,14 Therefore, employing the DFM in the insulator ALD process can effectively reduce the exposed area of the TiN surface to the oxidant of the ALD process.…”
Section: Introductionmentioning
confidence: 99%
“…During this stage, some part of the physisorbed precursor screens the unoccupied chemisorption site, unintentionally, thereby reducing the precursor chemisorption density, which is called the “screening effect”. 11–14 Accordingly, the screening effect is one of the mechanisms that increases the exposed area in the early stage of the insulator ALD process. In contrast to the steric hindrance effect, the screening effect can be effectively eliminated by reducing the physisorbed precursor.…”
Section: Introductionmentioning
confidence: 99%