Improved quantitative mobility spectrum analysis for Hall characterization

Abstract

We present an improved quantitative mobility spectrum analysis (i-QMSA) procedure for determining free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity measurements on bulk or layered semiconductor samples. The i-QMSA technique is based on a fundamentally new approach, which optimizes the fit to the conductivity tensor components and their slopes by making those adjustments in the mobility spectra that result in the greatest error reduction. Empirical procedures for manipulating the mobility spectra are also introduced, with the dual purpose of reducing the error of the fit and simplifying the shape of the spectra to minimize the presence of unphysical artifacts. A fully automated computer implementation of the improved QMSA is applied to representative synthetic and real data sets involving various semiconductor material systems. These results show that, as compared with previous approaches, the presented algorithm maximizes the information that may be extracted from a given data set, and is suitable for use as a standard tool in the characterization of semiconductor material and device transport properties.

Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures

“…To solve this problem the magnetic field dependences of the magnetoresistance and Hall resistance at 295 K were measured and MSA was applied. MSA was proposed by Beck and Anderson, 7 and was further developed by Dziuba et al, 8 by Antoszewski et al, 9 by Vurgaftman et al, 10 and by Kiatgamolchai et al 11,12 as a useful technique for analyzing multi-carrier galvanomagnetic phenomena. MSA is the transformation of the electrical conductivity tensor versus the magnetic field into the conductivity density versus the mobility spectrum.…”

Well parameters of two‐dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

“…To clearly extract carriers in a sample, dimensionless product of the lowest mobility and highest field must be greater than unity ( min max 1 B μ ≥ ). For the QMSA studies, min max 0.5 B μ ≈ condition can be accepted as a limit [16]. For the present study, this condition seems to be barely satisfied, in which the results scatter in the QMSA data.…”

“…5 % error) and resistivity (with max. 0.2 % in the studied range) were measured for both current directions, both magnetic field polarizations, and all the possible contact configurations at a 20 magnetic field step between 0 and 1.5 T. The magnetic field dependent data were analyzed by using the improved QMSA (i-QMSA) [16] technique (herein referred to as simply "QMSA").…”

DX-center energy calculation with quantitative mobility spectrum analysis in n-AlGaAs/GaAs structures with low Al content

“…In this study, this condition seems to be barely fulfilled for the mobilities of the latter carrier extracted by QMSA (µ min B max ∼ 0.3). However, we also presented successfully extracted different carriers with low mobilities in an AlGaN/GaN heterostructure grown on sapphire [32]. Because of this barely fulfilled condition, QMSA results of latter carrier are seemed to be scattered.…”