Improved Repeatability in Planar Water-gated Field Effect Transistor (WG-FET) with 16-nm-thick Single Crystalline Si Film

Sonmez, Bedri Gurkan; Ertop, Ozan; Mutlu, Senol

doi:10.1016/j.proeng.2016.11.503

Cited by 5 publications

(5 citation statements)

References 4 publications

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“…The equation of the resistance is given as 1where Rw is the resistance of the DI-water droplet, is the resistivity of DI-water, d is the distance between Si layer and top gate and A is the area of the active Si layer and top gate surface. Simplified equations of the EDL capacitances can be given as (2) where C1 is the EDL capacitance on top gate surface, C2 is the EDL capacitance on Si layer surface, ε is the permittivity of DI-water and λ is the double layer thickness. When WG-FET is turned on, the voltage across its source and drain becomes approximately zero.…”

Section: Methodsmentioning

confidence: 99%

“…Water-gated field effect transistors (WG-FET) that use 16-nm-thick single crystalline silicon film as active layer have a high potential in chemical and biological sensors because of their liquid-solid interfaces and capability to form integrated read-out circuit [1][2][3][4]. In WG-FET, EDL capacitance at water/silicon interface is used as gate insulator, which allows easy and low-cost fabrication of a low voltage device with high channel control.…”

Section: Introductionmentioning

confidence: 99%

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Displacement Sensor with Inherent Read-Out Circuit Using Water-Gated Field Effect Transistor (WG-FET)

2018

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This paper presents, for the first time, a displacement sensor with inherent read-out circuit using an inverter built with WG-FET that has 16-nm-thick single crystalline silicon film. In WG-FET, electrical double layer (EDL) capacitances are formed at water/silicon and water/top gate interfaces. These two capacitances and the resistance of the de-ionized (DI) water droplet build a first order RC network. Propagation delay of an inverter built with WG-FET depends on this RC constant. When the distance between top gate and silicon film changes, EDL capacitances remain the same, but resistance of the DI-water droplet changes. Accordingly, propagation delay of the inverter changes linearly with this distance. Increasing the distance from 400 µm to 1200 µm changes low-to-high propagation delay tplh of the inverter from 1.08 ms to 1.36 ms and high-to-low propagation delay tphl from 0.48 ms to 0.56 ms, which yields sensitivities of 0.35 µs/µm and 0.1 µs/µm, respectively.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Displacement Sensor with Inherent Read-Out Circuit Using Water-Gated Field Effect Transistor (WG-FET)

2018

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“…After thermal annealing at 500 °C, ohmic contacts are obtained between Al and Si films. SiO2 in the field regions are insulated with photoresist (PR) for repeatability enhancement [3]. Source and drain electrodes are also insulated to prevent galvanic corrosion of Al in NaCl solution.…”

Section: Methodsmentioning

confidence: 99%

Investigation of the Salt Concentration Dependence of Water-Gated Field Effect Transistors (WG-FET) Using 16-nm-Thick Single Crystalline Si Film

Ertop

Sonmez

Mutlu

2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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This paper presents the effect of NaCl concentration on the operation of a water-gated field effect transistor (WG-FET) that uses 16-nm-thick single crystalline silicon (Si) film. In WG-FET, electrical double layer (EDL) formed at the water/silicon interface behaves as gate dielectric and this fluidic interface makes WG-FET a suitable device for sensing applications. Characteristics of EDL and the threshold voltage of WG-FET depend on the molarity of solution. Increasing the molarity of NaCl solution from 0.5 to 65 mM changes the threshold voltage from 360 to 465 mV. Accordingly, drain current of the WG-FET device changes with NaCl concentration.

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“…A thermal annealing process step is used to obtain ohmic contacts between source-drain electrodes and the active Si channel layer. All field region is insulated with 4 μm-thick photoresist (PR) layer to prevent charge trapping at the oxide surface and its parasitic effects [38,39]. Electrical contacts to source-drain electrodes are formed with silver epoxy and the…”

Section: Fabricationmentioning

confidence: 99%

Realization and AC modeling of electronic circuits with water-gated field effect transistors (WG-FETs) based on gate probe distance

Sonmez¹,

Ertop²,

Mutlu³

2018

J. Micromech. Microeng.

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We present AC modeling of WG-FET devices based on gate probe distance. Small- and large-signal models are proposed. It is shown that unity gain frequency is inversely proportional to gate distance. Also, common source amplifier, inverter, and ring oscillator circuits are fabricated with WG-FET devices, which use 16 nm-thick mono-Si film as channel layer, for the first time. Circuit simulations are performed based on AC models. Results are verified with experimental measurements using de-ionized (DI) water. For common source amplifier, fUG is measured as 21 Hz for 2 mm gate distance, and it is increased to 1.2 kHz when gate distance is decreased to 200 μm. For inverter, rail-to-rail operation is observed with tPLH of 24 ms and tPHL of 58 ms for 1 square-wave input signal at 1 Hz. Gain is measured as −11 V/V at switching threshold. Ring oscillator is realized with five inverters. A square-wave output signal with amplitude of 840 and frequency of 2.6 Hz is obtained. AC modeling of WG-FET enables realization of advanced circuits which are inherently compatible with fluidic systems. Therefore, they can be valuable assets especially in microfluidic applications.

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Improved Repeatability in Planar Water-gated Field Effect Transistor (WG-FET) with 16-nm-thick Single Crystalline Si Film

Cited by 5 publications

References 4 publications

Displacement Sensor with Inherent Read-Out Circuit Using Water-Gated Field Effect Transistor (WG-FET)

Displacement Sensor with Inherent Read-Out Circuit Using Water-Gated Field Effect Transistor (WG-FET)

Investigation of the Salt Concentration Dependence of Water-Gated Field Effect Transistors (WG-FET) Using 16-nm-Thick Single Crystalline Si Film

Realization and AC modeling of electronic circuits with water-gated field effect transistors (WG-FETs) based on gate probe distance

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