Improved resistive switching of RGO and SnO2 based resistive memory device for non-volatile memory application

Komal, Km; Gupta, Govind; Singh, Mukhtiyar; Singh, Bharti

doi:10.1016/j.jallcom.2022.166196

Cited by 21 publications

(9 citation statements)

References 53 publications

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“…For the synthesized SnO 2 powder, diffraction peaks are located at 26 • , 34 • , 52 • , and 65 • corresponding to the (110), (101), (211), and (202) faces of SnO 2 , respectively. The observed SnO 2 peaks match the tetragonal rutile crystal structure for SnO 2 [35,37]. The MoS 2 -SnO 2 nanocomposite powder clearly shows the unique peaks of SnO 2 and MoS 2 , and no additional impurity peaks can be seen, proving that MoS 2 -SnO 2 nanocomposite was successfully made using a two-step hydrothermal synthesis.…”

Section: X-ray Diffraction (Xrd)mentioning

confidence: 53%

“…A homogeneous layer of MoS 2 -SnO 2 was obtained after eight times repetitions of spin coating. Finally, the top aluminium electrode was deposited through the shadow mask using the thermal evaporation process under vacuum conditions of 10 −5 bar [37]. The fabrication of the Al/MoS 2 -SnO 2 /ITO-PET based MIM device is schematically shown in figure 2 [16].…”

Section: Film Fabricationmentioning

confidence: 99%

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Flexible SnO₂–MoS₂ based memristive device exhibiting stable and enhanced memory phenomenon

Komal,

Singh,

Singh

2023

J. Phys. D: Appl. Phys.

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Flexible non-volatile memory devices have been gaining interest in expanding the digital data storage world. Due to the burgeoning advancement in the healthcare industry, the Internet of Things, and wearable electronics, the demand for ultra-thin, low-power, and flexible memory is increasing. Further, the advancement of synthesis procedures for two-dimensional nanomaterials having better optical, electrical, and mechanical strength with flexibility has fuelled the flexible memory device area, as commonly used flash memory is approaching its physical limit. In this context, the present work reports the flexible resistive switching memory device based on pure molybdenum disulfide (MoS2) and tin oxide (SnO2) based nanocomposite powder synthesized using the simple hydrothermal process. The nanocomposite formation was characterized using x-ray diffraction and Raman spectroscopic techniques. The memory device was fabricated by spin-coating the pure MoS2, pure SnO2, and MoS2–SnO2 nanocomposite film over the ITO-PET flexible substrate. The device was completed by thermally evaporating the thin Al layer through a shadow mask. It was found that MoS2–SnO2 based memory devices exhibited improved switching performance having a higher I ON/I OFF ratio, and lower switching voltage in comparison to pure MoS2 and pure SnO2-based devices (I ON/I OFF ratio ∼100, V = 0.5 V). Furthermore, to check the stability and cyclic performance of the fabricated device, the retention and endurance test was also performed, and the MoS2–SnO2 device retained the HRS and LRS states up to 2 × 103s and showed stable performance up to 100 switching cycles without much degradation, respectively. It should be mentioned that the presently proposed ReRAM device based on SnO2 and MoS2 with flexible and low-power features had excellent potential for use in the wearable device industry.

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Section: X-ray Diffraction (Xrd)mentioning

confidence: 53%

Section: Film Fabricationmentioning

confidence: 99%

Flexible SnO₂–MoS₂ based memristive device exhibiting stable and enhanced memory phenomenon

Komal,

Singh,

Singh

2023

J. Phys. D: Appl. Phys.

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“…Recently nanoparticle research have got much attention due to its potential application in various field of science and technology, like energy harvesting ( e.g. nanoparticle solar cell) [1], gas sensing [2], data storage [3] catalyst agent [4], biomedical etc [5,6] due to its improved chemical or physical properties relative to those of large-sized particles. The physical and chemical properties of nanoparticles can be tuned by adjusting the particle size, surface structure, chemical composition, particle surface etc [7,8].…”

Section: Introductionmentioning

confidence: 99%

Structural and magnetic properties of Fe and Ni co-doped SnO₂ nanoparticles prepared by co-precipitation method

Khatun,

Amin,

Sarker

et al. 2024

Mater. Res. Express

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In this research work Fe and Ni co-doped Tin oxide (SnO2) nanoparticles have been prepared by co-precipitation method. The samples were prepared at various combination of Fe and Ni from 0% up to 10%. The produced nanoparticles were studied by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), UV-Vis Spectrophotometer, Fourier Transformation Infrared Spectroscopy (FTIR) and Vibrating Sample Magnetometer (VSM). The XRD study reveals the formation of rutile structure of the undoped and doped SnO2 nanoparticles with the average crystallite size of 1.5-10.8 nm. Metal oxide bonding is confirmed through FTIR measurement. Optical band gap redshift (3.9 to 3.64 eV) with doping of Fe and Ni atom is observed. SEM image confirms the formation of spheroidal nanoparticles and size of the nanoparticle varies from 36 to 15 nm. The VSM study shows the ferromagnetic phase transition at 7% Ni, Fe doped SnO2 nanoparticles. This ferromagnetism arises for the oxygen vacancies and defect states. Further, increase of doping concentration of 10%, nanoparticles show the phase transition from ferromagnetic to paramagnetic. Such transition can be applicable in hyperthermia treatment and memory devices.

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“…[5] Among them, tin dioxide (SnO 2 ) is one of the most promising materials because of its compatibility with complementary metal oxide semiconductors and unique electrical performance. [6,7] Recently, the RS characteristics of SnO 2 nanostructures have been reported in the literature, including both unipolar resistive switching [8][9][10] and bipolar resistive switching. [11][12][13] For instance, Liu et al [14] constructed Cu/SnO 2 nanorod arrays: ZnO (NP)/FTO bipolar resistive switching devices, and speculated that the RS effect is caused by the formation and fracture of Cu 2+ conducting filaments under the action of an electric field.…”

Section: Introductionmentioning

confidence: 99%

Resistive switching properties of SnO₂ nanowires fabricated by chemical vapor deposition

et al. 2023

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Resistive switching (RS) devices have great application prospects in emerging memory and neuromorphic fields, but the stability of the devices and the unclear RS mechanism restrain the relevant application. In this work, we construct a hydrogenated Au/SnO2 nanowire (NW)/Au device with two back-to-back Schottky diodes and investigate the RS characteristics in air and vacuum. We find that the I on/I off ratio increases from 20 to 104 when the reading voltage decreases from 3.1 to -1 V under the condition of electric field. Moreover, the rectification ratio can be up to 104 due to the oxygen ion migration modulated by the electric field. The nanodevice also shows non-volatile resistive memory characteristic. The RS mechanism is clarified based on the changes of the Schottky barrier width and height at the interface of Au/SnO2 NW/Au device. Our results provide a kind of strategy for designing high-performance memristive devices based on SnO2 NWs.

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Improved resistive switching of RGO and SnO2 based resistive memory device for non-volatile memory application

Cited by 21 publications

References 53 publications

Flexible SnO₂–MoS₂ based memristive device exhibiting stable and enhanced memory phenomenon

Flexible SnO₂–MoS₂ based memristive device exhibiting stable and enhanced memory phenomenon

Structural and magnetic properties of Fe and Ni co-doped SnO₂ nanoparticles prepared by co-precipitation method

Resistive switching properties of SnO₂ nanowires fabricated by chemical vapor deposition

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Improved resistive switching of RGO and SnO2 based resistive memory device for non-volatile memory application

Cited by 21 publications

References 53 publications

Flexible SnO2–MoS2 based memristive device exhibiting stable and enhanced memory phenomenon

Flexible SnO2–MoS2 based memristive device exhibiting stable and enhanced memory phenomenon

Structural and magnetic properties of Fe and Ni co-doped SnO2 nanoparticles prepared by co-precipitation method

Resistive switching properties of SnO2 nanowires fabricated by chemical vapor deposition

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Product

Resources

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Flexible SnO₂–MoS₂ based memristive device exhibiting stable and enhanced memory phenomenon

Flexible SnO₂–MoS₂ based memristive device exhibiting stable and enhanced memory phenomenon

Structural and magnetic properties of Fe and Ni co-doped SnO₂ nanoparticles prepared by co-precipitation method

Resistive switching properties of SnO₂ nanowires fabricated by chemical vapor deposition