Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM application

First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory

“…Among those transition metal oxides typically deployed in oxide-based ReRAMs as resistance changing materials, zirconia (ZrO 2 ) is one of the most popular one 2,4,[10][11][12][13] . Besides from ReRAM, even only in semiconductor device applications, zirconia has a wide variety of applications such as high-k dielectrics in silicon or III-V metal-oxide-semiconductor field-effect transistor (MOSFET) devices 14,15 .…”

“…It is known that there are mainly three phases of ZrO 2 (a) monoclinic, at temperatures below 1700 °C, (b) tetragonal, above 1700 °C up to 2370 °C, and (c) cubic, above 2370 °C 16 . Although by addition of impurities with lower valent cations such as Y 2 O 3 and CaO, cubic fluorite structured ZrO 2 can be stabilized and thus various good properties of the structure like chemical inertness and high ionic conductivity can be retained even at room temperature 12 , the importance of monoclinic phase ZrO 2 which is most stable structure in the temperature range near room temperature, could never be overlooked.…”

Resistive Switching Characteristics in TiO2/LaAlO3Heterostructures Sandwiched in Pt Electrodes

“…Resistive random access memories (RRAMs), in which binary logical states are represented by a low resistance and a high resistance state [1], have attracted considerable attention, due to their distinctive features and advantages meeting the demands of next generation high-speed [2,3], low-power consumption [3], and high-density [4] memory devices. A variety of oxides, including binary metal oxides [5][6][7][8], perovskite dielectrics [9][10][11][12], and complex electron correlated oxides [13][14][15][16], have been demonstrated to show resistance switching behaviors, among which TiO 2 [17,18] is one of the most extensively studied, owing to its unique advantages such as wide band gap, high temperature stability, and high dielectric constant with flexibility to exhibit both unipolar and bipolar switching characteristics. However, several issues, including device stability, endurance, and the ON/OFF resistance ratio [17], still need to be improved.…”

Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15Film

“…Recently, various new nonvolatile memory devices were investigated, such as ferroelectric random access memory (FeRAM), resistive random access memory (RRAM), and phase change memory (PCM). Especially, the RRAM that composed of a simple metal-insulator-metal (MIM) structure has the advantages of low power consumption, high speed operation, good retention, and high-density integration capability [1][2][3]. Recent RRAM research includes perovskite oxides and metal oxides with different electrodes such as VO [4], Pr 0.7 Ca 0.3 MnO 3 [5], NiO [6], La 2 O 3 [7], Dy 2 O 3 [8], and ZnO [9].…”