Improved Resistive Switching Properties of Solution-Processed TiO_xFilm by Incorporating Atomic Layer Deposited TiO₂layer

Abstract

Resistive switching characteristics of bilayered titanium oxides layer were investigated. To improve the relatively poor electrical characteristics of solution-processed TiO x active layers, we incorporated an additional thin TiO 2 (8 nm) layer by atomic layer deposition. The bilayered titanium oxide active layer showed a significantly improved performance, such as a larger ON/OFF ratio, a stable resistive switching over 100 times under a dc voltage sweep, cell-to-cell uniformity, and high device yield (>90%). These improved properties can be explained by the transition of the resistive switching mechanism from filamentary switching through the defective side in solution-processed TiO x to interfacial switching resulting from the oxygen ion migration between two active layers. #

Structural phase transition and resistive switching properties of Cu x O films during post-thermal annealing

“…Oxide semiconductors have advantages such as high stability, superior optical properties, and high carrier mobility; therefore, they are used in various electronic devices such as photovoltaics and thin film transistors (TFTs). Among oxide semiconductors, transition metal oxides such as HfO 2 [1,2], Ta 2 O 5 [3,4], TiO 2 [5,6], NiO [7,8], and copper oxide (Cu x O) [9,10], exhibit excellent resistive properties and are gaining attention as promising candidates for ReRAM due to their distinctive switching characteristics. Among these, Cu x O, a cost-effective and non-toxic p-type semiconductor, stands out for its outstanding optical and electrical properties.…”

Low-Power and High-Reliability Gadolinium Oxide Resistive Switching Memory with Remote Ammonia Plasma Treatment

“…7,8) Metal-insulator-metal (MIM) structures with transition metal-oxide (TMO) materials, such as Al 2 O 3 , TiO 2 , HfO 2 , and ZrO 2 , have been shown to exhibit superior resistive switching properties. [9][10][11][12][13][14][15][16] Recently, gadolinium oxide has been proposed for use in RRAM, 17) as the high Gibbs free energy ÁG for gadolinium-oxygen binding (approximately À493 kJ/mole) can induce more oxygen ions and vacancies for better resistive switching.…”