Resistive Switching Crossbar Arrays Based on Layered Materials

Abstract

Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices mm−2) and this can be further enhanced by stacking them three‐dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase‐change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures‐of‐merit and procedures to implement LM‐based RS devices are defined. LM‐based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm2) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.

Introduction of defects in hexagonal boron nitride for vacancy-based 2D memristors

“…1,2 RS devices comprising two-dimensional (2D) materials as the switching layer display unique advantages, including tunable switching behavior (threshold switching or resistive switching), controllable neuromorphic properties ( potentiation and relaxation), and ultra-low power consumption. 3 Compared with the traditional RS layer (metal oxide) in resistive random-access memory (RRAM), 2D hexagonal boron nitride (h-BN) displays a low leakage current in nanometre thickness and it could help reduce the current crosstalk between adjacent elements in crossbar arrays. 4,5 The excellent properties of RRAM devices based on 2D materials contribute to their promising applications in information storage and neuromorphic computing.…”

Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors

“…Among them, 2D layered materials, which possess strong in‐plane chemical bonds and weak out‐of‐plane vdWs interactions, have shown exciting chemical and physical properties that endow their great potential in many applications including memristors. [ 167 ] Their atomically‐thin thickness of 2D layered materials renders them a bright future in realizing memristor devices and arrays with great flexibility, low‐power operation, and high‐density integration. In addition, it is feasible for varieties of available 2D materials to be transformed into corresponding inks owing to their excellent dispersibility in liquid carriers, thus is promising for functional printed devices.…”

Fully Optical in Operando Investigation of Ambient Condition Electrical Switching in MoS2 Nanodevices

“…[17] To achieve commercial importance, vertical nanoscale devices (with areas < 10 4 nm 2 ) are desirable, as they provide the lowest switching voltages and highest integration densities. [27] On the contrary, most of the switching behaviors are studied in microsized devices [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] although stochastic switching and the separation between A 1g and E 1 2g Raman modes. [39,42] V S and V o p-dope MoS 2 quenching PL [40,43] and hence switching processes associated with n-doping (charge trapping [2,6,11] and V o migration [6,12] ) would mitigate the drop in PL.…”

“…Electrical switches based on MoS 2 nanosheets have attracted a lot of attention [ 1–20 ] due to their ultralow switching energies [ 14,20 ] without excessive leakage currents for few‐nanometers thick devices. [ 13,16 ] Moreover, some of them exhibit nonvolatile (memristive) switching [ 12,14,17 ] which facilitates neuromorphic computing capable of reducing energy consumption in IT by up to 80%.…”

“…To achieve commercial importance, vertical nanoscale devices (with areas < 10 4 nm 2 ) are desirable, as they provide the lowest switching voltages and highest integration densities. [ 27 ] On the contrary, most of the switching behaviors are studied in microsized devices [ 1–17 ] although stochastic switching processes are different for microscale and nanoscale electrodes. [ 27 ] To our knowledge, only two works investigate MoS 2 biased vertically with nanosized electrodes.…”