Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation

Kim, Dongyoung; Sung, Woongje

doi:10.1109/led.2021.3123289

Cited by 20 publications

(12 citation statements)

References 12 publications

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“…As mentioned in forward characteristics, different JFET and P-well implants contribute to the different effective JFET widths despite the same designed JFET width. Especially, under SC condition that is extremely high temperatures, the maximum saturation current is largely affected by the effective JFET width [12]. The drain current of the fabricated MOSFETs with different JFET widths using deep JFET implants is shown in Fig.…”

Section: Trade-off Between Ronsp -Scwt and Discussionmentioning

confidence: 99%

The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs

Kim

Yun

Morgan

et al. 2022

IEEE J. Electron Devices Soc.

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1.2kV 4H-SiC MOSFETs with different junction depths of JFET and P-well regions were fabricated. For each JFET/P-well depth combination, channel lengths and JFET widths were also varied to compare specific on-resistance, breakdown voltage, and short-circuit withstand time. It was discovered that deep JFET structure provides low specific on-resistance (12% lower) with high breakdown voltage. On the other hand, MOSFETs with deep P-well result in high breakdown voltage with low leakage current even in shorter channel length (0.4 µm). Moreover, trade-off relationship between Ron,sp and short-circuit withstand time is discussed for MOSFETs with different JFET widths and channel lengths; the deep JFET implant provides better trade-off relationship due to the feasibility of narrow JFET width. For the further improvement of trade-off relationship, MOSFETs with deep JFET and P-well implant are proposed. Lastly, the importance of high channel mobility for not only static characteristics but also short-circuit characteristics was investigated. The in-depth understanding of measured electrical characteristics was supported by 2D-device simulations.

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Section: Trade-off Between Ronsp -Scwt and Discussionmentioning

confidence: 99%

The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs

Kim

Yun

Morgan

et al. 2022

IEEE J. Electron Devices Soc.

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“…Traction systems in electric vehicles and trains have been fabricated using 4H-SiC power semiconductor devices 4 , 5 . However, 4H-SiC devices still have long-term reliability issues, such as dielectric breakdown or ruggedness in short-circuit connection 6 , 7 , and one of the most important reliability issues is bipolar degradation 2 , 8 – 11 . This bipolar degradation was discovered more than 20 years ago, and it has been a long-lasting issue for SiC device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Kato

Watanabe

Mii

et al. 2022

Sci Rep

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Abstract4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking-faults (1SSFs) from basal plane dislocations in the 4H-SiC crystal. Here, we present a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer. PiN diodes fabricated on a proton-implanted wafer show current–voltage characteristics similar to those of PiN diodes without proton implantation. In contrast, the expansion of 1SSFs is effectively suppressed in PiN diodes with proton implantation. Therefore, proton implantation into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation in 4H-SiC power-semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.

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“…3 Traction systems in electric vehicles and trains have been fabricated using 4H-SiC power semiconductor devices. 4,5 However, 4H-SiC devices still have long-term reliability issues, such as dielectric breakdown or ruggedness in short-circuit connection, 6,7 and one of the most important reliability issues is bipolar degradation. 2,8−11 This bipolar degradation was discovered more than 20 years ago, and it has been a long-lasting issue for SiC device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Kato

Watanabe

Mii

et al. 2022

Preprint

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4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar degradation. This degradation is caused by the expansion of single Shockley stacking faults (1SSFs) from basal plane dislocations in the 4H-SiC crystal. Here, we present a method for suppressing the 1SSF expansion by proton implantation on a 4H-SiC epitaxial wafer. PiN diodes fabricated on a proton-implanted wafer show current–voltage characteristics similar to those of PiN diodes without proton implantation. In contrast, the expansion of 1SSFs is effectively suppressed in PiN diodes with proton implantation. Therefore, proton implantation into 4H-SiC epitaxial wafers is an effective method for suppressing bipolar degradation in 4H-SiC power-semiconductor devices while maintaining device performance. This result contributes to the development of highly reliable 4H-SiC devices.

show abstract

Improved Short-Circuit Ruggedness for 1.2kV 4H-SiC MOSFET Using a Deep P-Well Implemented by Channeling Implantation

Cited by 20 publications

References 12 publications

The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs

The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC MOSFETs

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

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