A detailed structural analysis of 1.2 kV 4H-SiC MOSFETs with accumulation mode channel is reported in this paper. 1.2 kV SiC MOSFETs with a variety of cell designs were fabricated and compared with respect to the output and transfer characteristics, and blocking behaviors. All the design rules, such as channel length, JFET width, contact openings, gate-to-source overlap, and cell pitch were investigated to clearly provide the quantitative impact on the static performances. 2D-simulation was also conducted to support experimental results. As a result, it turned out that the channel length is the most determining factor for the specific on-resistance, resulting in 0.364 mΩ-cm 2 increase per 0.1 μm increase in the channel length. However, the channel potential is also largely dependent on the channel length such that the leakage current tends to increase with short channel design. The enhanced doping in the JFET region with a current spreading layer (CSL) is essential for achieving a narrower JFET width, which satisfies all static performances, as well as device reliability and ruggedness. Methods to further improve the trade-off characteristics using other design aspects are discussed in this paper.
This paper reports the demonstration of a 600 V 4H-SiC lateral MOSFET with a large current handling capability (10 A). To achieve a high breakdown voltage in a lateral architecture, a REduced SURface Field (RESURF) structure was implemented to alleviate surface electric field crowding. A single RESURF (P-top) design on an N-drift on a 6-in. N+ substrate demonstrated a voltage supporting capability of 120 V/μm, resulting in a breakdown voltage of 600 V. The total width of 198 mm for the interdigitated gate fingers was designed to accomplish the high current capability. It turned out that, for relatively low voltage SiC lateral MOSFETs (<600 V), more focus needs to be placed on achieving a low channel, contact, metal, and JFET region resistance than a low drift layer resistance to further improve the on-resistance. Device design, fabrication, and electrical characterization of the proposed 600 V, 10 A, 4H-SiC lateral single RESURF MOSFETs are discussed in this paper.
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